Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by

Kalboussi, A.; Marrakchi, G.
November 1992
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2583
Academic Journal
Examines the use of photoinduced current transient spectroscopy in characterizing the defects of thermally annealed iron-doped indium phosphide. Formation of four deep traps following thermal annealing treatment; Effects of high temperature annealing on the electrical properties of the material; Application of isothermal annealing during device fabrication.


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