TITLE

Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by

AUTHOR(S)
Kalboussi, A.; Marrakchi, G.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2583
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of photoinduced current transient spectroscopy in characterizing the defects of thermally annealed iron-doped indium phosphide. Formation of four deep traps following thermal annealing treatment; Effects of high temperature annealing on the electrical properties of the material; Application of isothermal annealing during device fabrication.
ACCESSION #
4250598

 

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