TITLE

InAlAs/InP modulation doped heterostructures by atmospheric pressure metalorganic chemical vapor

AUTHOR(S)
Pan, N.; Carter, J.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2572
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the indium aluminum arsenide/indium phosphide (InP) modulation doped heterostructures using tertiarybutylphosphine (TBP) in metalorganic chemical vapor deposition. Definition of TBP; Use of silicon photodetectors in measuring the modulated reflectance of the heterostructures; Effect of arsenic and phosphorus switching on InP interfaces.
ACCESSION #
4250594

 

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