InAlAs/InP modulation doped heterostructures by atmospheric pressure metalorganic chemical vapor

Pan, N.; Carter, J.
November 1992
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2572
Academic Journal
Examines the indium aluminum arsenide/indium phosphide (InP) modulation doped heterostructures using tertiarybutylphosphine (TBP) in metalorganic chemical vapor deposition. Definition of TBP; Use of silicon photodetectors in measuring the modulated reflectance of the heterostructures; Effect of arsenic and phosphorus switching on InP interfaces.


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