TITLE

Spin-dependent effects in porous silicon

AUTHOR(S)
Brandt, M.S.; Stutzmann, M.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2569
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the electron spin resonance effects in porous silicon (Si). Optical properties of porous Si; Impact of resonance absorption on luminescence intensity; Use of microscopic electronic processes in determining the macroscopic properties of porous Si.
ACCESSION #
4250593

 

Related Articles

  • Nature of P[sub b]-like dangling-orbital centers in luminescent porous silicon. Rong, F.C.; Harvey, J.F. // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p920 

    Examines the nature of P[sub b]-like dangling orbital centers in luminescent porous silicon (LPSi). Enhancement of the structure by oxidation; Use of electron paramagnetic resonance for structure detection; Presence of other recombination centers; Absence of dominant microsurface orientation in...

  • Electron paramagnetic resonance observation of trigonally symmetric Si dangling bonds in porous.... Mao, J.C.; Jia, Y.Q.; Fu, J.S.; Wu, E.; Zhang, B.R.; Zhang, L.Z.; Qin, G.G. // Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1408 

    Examines the electron paramagnetic resonance (EPR) observation of trigonally symmetric Si dangling bonds in porous silicon layers. Indication of the EPR signal rotational pattern; Existence of crystalline Si phase; Parallelism between dangling bond formation and surface oxidation.

  • Electron paramagnetic resonance in heat-treated porous silicon. Laiho, R.; Vlasenko, L. S.; Afanasiev, M. M.; Vlasenko, M. P. // Journal of Applied Physics;10/1/1994, Vol. 76 Issue 7, p4290 

    Provides information on a study which investigated electron paramagnetic resonance (EPR) of centers produced in porous silicon by heat treatment in air. Main defect responsible for EPR spectra in porous silicon; Capability of thermal annealing; Composition of the spectrum detected after...

  • Electron paramagnetic resonance of porous p-silicon. Gupta, C. L. // Journal of Applied Physics;10/15/1994, Vol. 76 Issue 8, p4800 

    Provides information on a study that examined p-type porous silicon by electron paramagnetic resonance. Methodology of the study; Results and discussion on the study; Conclusion.

  • Electron paramagnetic resonance of porous silicon: Observation and identification of conduction-band electrons. Young, C. F.; Poindexter, E. H.; Gerardi, G. J. // Journal of Applied Physics;6/1/1997, Vol. 81 Issue 11, p7468 

    New features in electron paramagnetic resonance (EPR) of porous silicon have been examined here. A new isotropic EPR center was observed at g=1.9995(1) at T=4.2 K, in both p-type and n-type porous silicon. By comparing its g value with those of shallow donors in bulk silicon, the center was...

  • The EX defect center in porous silicon. Carlos, W. E.; Prokes, S. M. // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p2129 

    Focuses on a study that observed the EX center in porous silicon by electron spin resonance. Correlation of the ESR intensity of the EX center and the red room-temperature photoluminescence; Presence of oxygen in PSi; Involvement of delocalized spin in the EX center.

  • Electron paramagnetic resonance study of porous silicon. Bhat, S.V.; Jayaram, K. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2116 

    Presents an electron paramagnetic resonance study of porous silicon (Si). Observation of anisotropic Zeeman and hyperfine tensors; Factors attributed to the localization of charge carriers; Growth of Si layers by anodization of non-degenerate p-type (100) Si wafer.

  • Paramagnetic center in porous silicon: A dangling bond with C[sub 3v] symmetry. Uchida, Yoshishige; Koshida, Nobuyoshi // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p961 

    Examines the paramagnetic centers in self-supporting porous silicon (Si) films formed by anodization of Si(100) and (111) wafers. Use of x-band electron paramagnetic resonance (EPR); Maintenance of a silicon crystallinity in the as-anodized porous silicon surface; Interpretation of the angular...

  • Electron spin resonance investigations of oxidized porous silicon. Meyer, B.K.; Petrova-Koch, V. // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1930 

    Investigates electron spin resonance of oxidized porous silicon. Advantages of the electron paramagnetic resonance; Features of the photoluminescence emission band; Characteristics of amorphous silicon.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics