Si band-gap shrinkage caused by local strain at Si/SiO[sub 2] edge

Takeuchi, Kan; Aoki, Masakazu
November 1992
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2566
Academic Journal
Examines the silicon (Si) band-gap shrinkage following a local strain at Si/silicon dioxide (SiO[sub 2]) edge. Influence of band-gap shrinkage on Si devices characteristics; Impact of offset nitride on Si/SiO[sub 2] edge; Effectiveness of rapid thermal annealing in decreasing strain in the SiO[sub 2] interfaces.


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