TITLE

Improved ohmic contacts for p-type ZnSe and related p-on-n diode structures

AUTHOR(S)
Lansari, Y.; Ren, J.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2554
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents an improved ohmic contacts for p-type zinc selenide (ZnSe) and related p-on-n diode structures. Effectiveness of mercuric selenide (HgSe) as ohmic contact material for p-type semiconductors; Use of molecular beam epitaxy in depositing HgSe in p-type ZnSe; Utility of photolithography in processing p-type ZnSe layers.
ACCESSION #
4250588

 

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