TITLE

In situ observation of growth rate enhancement during gas source molecular beam epitaxy of

AUTHOR(S)
Mokler, S.M.; Ohtani, N.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2548
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the in situ growth rate measurements of silicon germanide alloys during gas source molecular beam epitaxy. Use of reflection-high-energy-electron-diffraction in monitoring the growth rate of silicon (Si) surfaces; Influence of additional hydrogen desorption centers on Si growth rates; Effectiveness of germanium atoms as hydrogen removal sites.
ACCESSION #
4250586

 

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