In situ observation of growth rate enhancement during gas source molecular beam epitaxy of

Mokler, S.M.; Ohtani, N.
November 1992
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2548
Academic Journal
Investigates the in situ growth rate measurements of silicon germanide alloys during gas source molecular beam epitaxy. Use of reflection-high-energy-electron-diffraction in monitoring the growth rate of silicon (Si) surfaces; Influence of additional hydrogen desorption centers on Si growth rates; Effectiveness of germanium atoms as hydrogen removal sites.


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