TITLE

Fractal analysis of leakage-current fluctuations of Si metal-oxide-semiconductor capacitors for

AUTHOR(S)
Miyano, Takaya; Fujito, Manabu
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2521
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the dry-etching damage following fractal analysis of leakage-current fluctuations of silicon metal-oxide-semiconductor capacitors (MOSC). Accounts on several classifications of silicon capacitors; Fabrication of MOSC on boron-doped monocrystalline silicon wafers; Relationship between dry etching damage and electron traps relaxation time.
ACCESSION #
4250577

 

Related Articles

  • Characterization of metal-oxide-semiconductor capacitors, fabricated on (111) beta-SiC.... Chen, H-S.; Parsons, J.D. // Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2576 

    Characterizes metal-oxide-semiconductor (MOS) capacitors fabricated on (111) beta-silicon carbide (SiC) epilayers. Growth of beta-SiC on (111) titanium carbide by disylethane pyrolysis; Electrical properties of MOS capacitor; Feasibility of inversion mode MOS field effect transistors in...

  • Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H-SiC metal-oxide-semiconductor capacitors. Cho, Won-ju; Won-ju Cho; Kosugi, Ryoji; Fukuda, Kenji; Arai, Kazuo; Suzuki, Seiji // Applied Physics Letters;8/21/2000, Vol. 77 Issue 8 

    The effect of hydrogen postoxidation annealing (POA) on the reliability of gate oxide formed in 4H-SiC metal-oxide-semiconductor (MOS) capacitors has been investigated. Argon POA at 1200 °C and hydrogen POA were carried out over a temperature range of 400-1000 °C to improve the properties...

  • Slow current transients in metal-oxide-semiconductor capacitors. Ze-Qiang Yao; Dimitrijev, Sima // Applied Physics Letters;5/8/1995, Vol. 66 Issue 19, p2510 

    Examines glitches of positive current at negative voltages during current-voltage measurements of metal-oxide-semiconductor (MOS) capacitors. Measurement of quasistatic capacitance-voltage characteristics; Current-voltage characteristics of MOS capacitors; Effects of dielectric stressing on...

  • Memory effects of silicon-implanted oxides for electrically erasable programmable read-only.... Ming-yin Hao; Hyunsang Hwang; Lee, Jack C. // Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1530 

    Examines the memory effects of Si-implanted oxides for electrically erasable programmable read-only memory applications (EEPROM). Effect of voltage pulse on capacitance voltage curve; Writing/erasing operations of EEPROM; Retention characteristics of EEPROM.

  • Electron trapping during high-field tunneling injection in metal-oxide-silicon capacitors: The effect of gate-induced strain. Hook, Terence B.; Ma, T.-P. // Journal of Applied Physics;8/1/1987, Vol. 62 Issue 3, p931 

    Focuses on electron trapping during high-field tunneling injection on metal-oxide-silicon capacitors as a function of gate-induced strain. Importance of the shift in the threshold voltage caused by the trapping of electrons in the oxide layer; Experimental devices used; Strain field in the...

  • Characterization of metal-oxide-semiconductor capacitors with a fast-ramp technique. Lou, L. F.; Tettemer, G. L. // Journal of Applied Physics;6/1/1988, Vol. 63 Issue 11, p5398 

    Presents a study which measured the displacement current in a metal-oxide-semiconductor (MOS) capacitor under fast-ramp conditions in the accumulation, depletion, and avalanche regimes. Characteristics of MOS using capacitance-voltage measurements; Computation of capacitance when a ramp voltage...

  • Asymmetric conductance peaks observed in silicon metal-oxide-semiconductor capacitors. Collins, S.; Kirton, M. J.; Uren, M. J. // Applied Physics Letters;7/23/1990, Vol. 57 Issue 4, p372 

    We report the observation of highly asymmetric peaks in conductance data from silicon metal-oxide-semiconductor capacitors. By extending the standard surface-potential fluctuation model to incorporate a range of capture cross sections at a given surface potential, we obtain excellent fits to the...

  • Polarity effect on the temperature dependence of leakage current through HfO[sub 2]/SiO[sub 2] gate dielectric stacks. Xu, Zhen; Houssa, Michel; De Gendt, Stefan; Heyns, Marc // Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1975 

    A strong polarity effect on the temperature dependence of the leakage current in TiN/HfO[sub 2]/SiO[sub 2]/Si capacitors is reported. A model is proposed to explain these experimental results that combines tunneling through the stack and Frenkel-Poole hopping in the HfO[sub 2] layer, depending...

  • On the positive charge and interface states in metal-oxide-semiconductor capacitors. Meinertzhagen, A.; Petit, C. // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p271 

    Studies the defects created in p-metal-oxide semiconductor (MOS) capacitors by Fowler-Nordheim injection. Description of MOS capacitors used in the study; Characterization of the charges of the different defects; Trapped hole annihilation; Defect creation process; Comparison between the buildup...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics