TITLE

1.3 mum InAs[sub y]P[sub 1-y]/InP strained-layer quantum well laser diodes grown by

AUTHOR(S)
Imajo, Y.; Kasukawa, A.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/23/1992, Vol. 61 Issue 21, p2506
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of InAs[sub y]P[sub 1-y]/indium phosphide strained-layer quantum well diodes using a metalorganic chemical vapor deposition. Accounts on several chemicals employed as dopant sources; Use of transmission electron microscope in determining the thickness of the strained-layer; Relevance of growth temperature interruption time between compounds.
ACCESSION #
4250571

 

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