Room-temperature 1.3 mum electroluminescence from strained Si[sub 1-x]Ge[sub x]/Si quantum wells

Mi, Q.; Xiao, X.
June 1992
Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3177
Academic Journal
Examines the room-temperature 1.3 micrometer electroluminescence from strained Si[sub 1-x]Ge[sub x]/silicon quantum wells. Origin of the electroluminescence; Estimation of the internal quantum efficiency; Requisition of minimum band offset for effective luminescence; Features of the luminescence.


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