TITLE

High quantum efficiency photoluminescence from localized excitons in Si[sub 1-x]Ge[sub x]

AUTHOR(S)
Lenchyshyn, L.C.; Thewalt, M.L.W.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3174
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the photoluminescence process in epitaxial Si[sub 1-x]Ge[sub x] layers grown on silicon by rapid thermal chemical vapor deposition. Recombination of the excitons; Characterization of the luminescence; Measurement of the photoluminescence quantum efficiency; Observation on the localized excitons.
ACCESSION #
4250562

 

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