TITLE

Critical layer thickness on (111)B-oriented InGaAs/GaAs heteroepitaxy

AUTHOR(S)
Anan, Takayoshi; Nishi, Kenichi
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3159
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the critical layer thickness of lattice-mismatched indium gallium arsenide on (111)B-oriented gallium arsenide. Measurement and enhancement of the critical layer thickness; Determination of the composition and growth rate of indium gallium arsenide; Dependence of critical thickness on growth direction.
ACCESSION #
4250557

 

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