TITLE

Effects of radiation-induced oxide-trapped charge on inversion-layer hole mobility at 300 and 77 K

AUTHOR(S)
Zupac, D.; Galloway, K.F.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3156
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effects of radiation-induced interface-trapped charge and oxide-trapped charge on the inversion-layer hole mobility in metal-oxide semiconductor field-effect transistors. Exhibition of mobility degradation; Importance of increasing Coulomb scattering in the trapped charge; Cause of mobility degradation; Description of the mobility behavior.
ACCESSION #
4250556

 

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