TITLE

Optoelectronic devices based on type II polytype tunnel heterostructures

AUTHOR(S)
Ohno, H.; Esaki, L.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3153
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the optoelectronic devices based on the unique property combinations of semiconductor tunnel junctions with polytype heterostructures. Composition of the light-emitting device structure; Source of the emission; Effect of indium arsenide low energy on the valence-band; Operation of the light-detector structures.
ACCESSION #
4250555

 

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