TITLE

Organometallic vapor-phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen

AUTHOR(S)
Pihlstrom, B.G.; Sheng, T.Y.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3144
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of the downstream hydrogen plasma on gallium arsenide homoepitaxial growth rate and carbon incorporation. Changes in the homoepitaxial activation energy; Consistency of the activation energy of the low-temperature region with the surface decomposition of arsenic hydrides; Relation of the substrate temperature with the onset of thermal growth.
ACCESSION #
4250552

 

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