Organometallic vapor-phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen

Pihlstrom, B.G.; Sheng, T.Y.
June 1992
Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3144
Academic Journal
Examines the effect of the downstream hydrogen plasma on gallium arsenide homoepitaxial growth rate and carbon incorporation. Changes in the homoepitaxial activation energy; Consistency of the activation energy of the low-temperature region with the surface decomposition of arsenic hydrides; Relation of the substrate temperature with the onset of thermal growth.


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