Enhanced growth of device-quality copper by hydrogen plasma-assisted chemical vapor deposition

Eisenbraun, Eric T.; Bo Zheng
June 1992
Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3126
Academic Journal
Develops a hydrogen plasma-assisted chemical vapor deposition process for the growth of device-quality copper films on large-area substrates. Presence of the high concentration of reactive hydrogen species in the plasma; Enhancement of the clean reduction of copper B-diketonate precursor; Production and characteristics of the copper films.


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