TITLE

Enhanced growth of device-quality copper by hydrogen plasma-assisted chemical vapor deposition

AUTHOR(S)
Eisenbraun, Eric T.; Bo Zheng
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3126
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Develops a hydrogen plasma-assisted chemical vapor deposition process for the growth of device-quality copper films on large-area substrates. Presence of the high concentration of reactive hydrogen species in the plasma; Enhancement of the clean reduction of copper B-diketonate precursor; Production and characteristics of the copper films.
ACCESSION #
4250546

 

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