TITLE

Surface structure of hydrated amorphous silicon oxide at 3 Angstrom resolution by scanning force

AUTHOR(S)
Tillmann, Ralf W.; Radmacher, Manfred
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the topology of a hydrated amorphous silicon oxide surface with a scanning force microscope. Independence of the measured surface reliefs from the local tip shape; Indication of the occurrence of surface rearrangement; Reason behind the decay of the surface relief; Features of the image time sequence.
ACCESSION #
4250541

 

Related Articles

  • Intense visible photoluminescence in amorphous SiO[sub x] and SiO[sub x]:H films prepared by evaporation. Rinnert, H.; Vergnat, M.; Marchal, G.; Burneau, A. // Applied Physics Letters;6/15/1998, Vol. 72 Issue 24 

    Visible photoluminescence (PL) can be observed in a-SiO[sub x] and a-SiO[sub x]:H alloys prepared by evaporation of SiO in ultrahigh vacuum and under a flow of hydrogen ions, respectively. The hydrogen and oxygen bonding is studied by infrared spectrometry. The hydrogen stability is followed by...

  • Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect. Bansal, Namrata; Koirala, Nikesh; Brahlek, Matthew; Myung-Geun Han; Yimei Zhu; Yue Cao; Waugh, Justin; Dessau, Daniel S.; Seongshik Oh // Applied Physics Letters;6/16/2014, Vol. 104 Issue 24, p1 

    The recent emergence of topological insulators (TI) has spurred intensive efforts to grow TI thin films on various substrates. However, little is known about how robust the topological surface states (TSS) are against disorders and other detrimental effects originating from the substrates. Here,...

  • Dynamics of gold cluster systems. Berlinger, A. // Applied Physics A: Materials Science & Processing;1999, Vol. 68 Issue 4, p403 

    Abstract. The growth of gold clusters on the surface of 10-nm-thick gold films deposited on the isotropic native SiO[sub x] surface of Si(111) wafers was studied as a function of annealing time at relatively low annealing temperatures (50 and 100 Celsius) by application of scanning force...

  • Lateral solid phase epitaxy of Si over SiO2 patterns and its application to silicon-on-insulator transistors. Sasaki, Masayoshi; Katoh, Teruo; Onoda, Hiroshi; Hirashita, Norio // Applied Physics Letters;8/18/1986, Vol. 49 Issue 7, p397 

    Lateral solid phase epitaxy (L-SPE) of vacuum deposited amorphous Si over SiO2 patterns for various substrate orientation and growth direction has been investigated and applied to fabrication of thin-film transistors on SiO2. It has been confirmed that the L-SPE growth length depends strongly on...

  • Controlled photoluminescence in amorphous-silicon-nitride microcavities. Serpengu¨zel, Ali; Tanriseven, Selim // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1388 

    Narrow-band and enhanced photoluminescence have been observed in hydrogenated amorphous-silicon-nitride microcavities. The distributed Bragg reflectors were fabricated using alternating layers of hydrogenated amorphous-silicon nitride and hydrogenated amorphous-silicon oxide. The microcavity...

  • Blue-light emission from amorphous SiO[sub x] nanoropes. Peng, X.S.; Wang, X.F.; Zhang, J.; Wang, Y.W.; Sun, S.H.; Meng, G.W.; Zhang, L.D. // Applied Physics A: Materials Science & Processing;2002, Vol. 74 Issue 6, p831 

    High-yield synthesis of amorphous silicon oxide nanoropes (SiONRs) was achieved by using simple evaporation and oxidation of Si. Transmission electron microscopy observations show that the amorphous SiONRs have a length of up to several hundreds of micrometers and a diameter of 20 to 40 nm....

  • Calculation of SiO2 Diffusion Coefficients Based on Kinetic Curves of Silica Grain Dissolution. Tén, B. Ya. // Glass & Ceramics;Mar/Apr2004, Vol. 61 Issue 3/4, p111 

    A method for calculating the SiO2 diffusion coefficient is proposed and a particular example is described using a generalized kinetic dependence of the process of dissolution of silica grains in melted glass.

  • Evidence of light-emitting amorphous silicon clusters confined in a silicon oxide matrix. Rinnert, H.; Vergnat, M.; Burneau, A. // Journal of Applied Physics;1/1/2001, Vol. 89 Issue 1, p237 

    Amorphous silicon oxide thin films were prepared by the coevaporation technique in ultrahigh vacuum. Different compositions were obtained by changing the evaporation rate of silicon. The samples were then annealed to different temperatures up to 950 °C. The composition and the structure were...

  • Effect of oxygen deficiency on the radiation sensitivity of sol-gel Ge-doped amorphous SiO2. Agnello, S.; Alessi, A.; Gelardi, F. M.; Boscaino, R.; Parlato, A.; Grandi, S.; Magistris, A. // European Physical Journal B -- Condensed Matter;Jan2008, Vol. 61 Issue 1, p25 

    We report experimental investigation by electron paramagnetic resonance (EPR) measurements of room temperature γ-ray irradiation effects in sol-gel Ge doped amorphous SiO2. We used materials with Ge content from 10 up to 104 part per million (ppm) mol obtained with different preparations....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics