In situ control of As composition in InAsP and InGaAsP grown by gas-source molecular beam epitaxy

Hou, H.Q.; Tu, C.W.
April 1992
Applied Physics Letters;4/13/1992, Vol. 60 Issue 15, p1872
Academic Journal
Describes an in situ method to control arsenic composition in indium arsenic phosphide and indium gallium arsenic phosphide grown by gas-source molecular beam epitaxy. Use of intensity oscillation of reflection high-energy electron diffraction; Effect of phosphorus addition on growth rate; Determination of incorporation-rate ratio of arsenic to indium.


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