TITLE

In situ control of As composition in InAsP and InGaAsP grown by gas-source molecular beam epitaxy

AUTHOR(S)
Hou, H.Q.; Tu, C.W.
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/13/1992, Vol. 60 Issue 15, p1872
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes an in situ method to control arsenic composition in indium arsenic phosphide and indium gallium arsenic phosphide grown by gas-source molecular beam epitaxy. Use of intensity oscillation of reflection high-energy electron diffraction; Effect of phosphorus addition on growth rate; Determination of incorporation-rate ratio of arsenic to indium.
ACCESSION #
4250500

 

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