TITLE

Multistable floating body potentials: The cause of hysteresis in silicon-on-insulator

AUTHOR(S)
Liu, Patrick S.; Li, G.P.
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/13/1992, Vol. 60 Issue 15, p1845
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the hysteresis characteristics in n-channel silicon-on-insulator metal-oxide-semiconductor transistors. Induction of hysteresis by multistable floating body potentials; Reduction of parasitic bipolar current gain and carrier multiplication factor; Use of body current scanning technique.
ACCESSION #
4250491

 

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