Multistable floating body potentials: The cause of hysteresis in silicon-on-insulator

Liu, Patrick S.; Li, G.P.
April 1992
Applied Physics Letters;4/13/1992, Vol. 60 Issue 15, p1845
Academic Journal
Examines the hysteresis characteristics in n-channel silicon-on-insulator metal-oxide-semiconductor transistors. Induction of hysteresis by multistable floating body potentials; Reduction of parasitic bipolar current gain and carrier multiplication factor; Use of body current scanning technique.


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