TITLE

Graded InGaP Schottky diodes on Si-doped InP

AUTHOR(S)
Pan, N.; Carter, J.
PUB. DATE
April 1992
SOURCE
Applied Physics Letters;4/13/1992, Vol. 60 Issue 15, p1839
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication of graded indium gallium phosphide Schottky barrier diodes containing silicon-doped indium phosphide (InP). Enhancement of Schottky barrier height of InP; Characterization of the diodes by Auger depth profiling; Optimization of rectification behavior, internal photoemission, and capacitance-voltage properties.
ACCESSION #
4250489

 

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