Localized fabrication of Si nanostructures by focused ion beam implantation

Steckl, A.J.; Mogul, H.C.
April 1992
Applied Physics Letters;4/13/1992, Vol. 60 Issue 15, p1833
Academic Journal
Describes the localized fabrication of silicon (Si) nanostructure by focused ion beam (FIB) implantation. Application of chemical etching on as-implanted Si nanostructure; Effect of FIB implantation on Si susceptibility to chemical etching; Formation of cantilever structure by implanted layer.


Related Articles

  • On the nanostructure of pure amorphous silicon. Williamson, D.L.; Roorda, S. // Applied Physics Letters;7/10/1995, Vol. 67 Issue 2, p226 

    Investigates the nanostructure of amorphous (a)-silicon (Si) produced by ion-implantation-induced amorphization of crystalline (c)-Si. Application of the small-angle X-ray scattering technique; Use of Si ion energies to generate an amorphous layer; Relationship between the diffuse scattering...

  • Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer. Mitan, M. M.; Pivin, D. P.; Alford, T. L.; Mayer, J. W. // Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2727 

    CoSi[sub 2] structures were formed by focused ion-beam implantation. Patterned silicide lines with dimensions down to 150 nm were produced on (100) silicon. The process involved the ion implantation of 200 keV As[sup ++] through a cobalt (34 nm)/oxide (∼2 nm) thin film structure. The thin...

  • Detection and characterization of silicon nanocrystals embedded in thin oxide layers. Perego, M.; Ferrari, S.; Fanciulli, M.; Assayag, G. Ben; Bonafos, C.; Carrada, M.; Claverie, A. // Journal of Applied Physics;1/1/2004, Vol. 95 Issue 1, p257 

    Silicon nanocrystals embedded in a thin oxide layer can be used as charge storage elements in nonvolatile memory devices. The structural characteristics of the nanocrystals and their position in the oxide determine the electrical properties of the devices. In this work, silicon nanocrystals have...

  • Electrically detected magnetic resonance in ion-implanted Si:P nanostructures. McCamey, D. R.; Huebl, H.; Brandt, M. S.; Hutchison, W. D.; McCallum, J. C.; Clark, R. G.; Hamilton, A. R. // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p182115 

    The authors present the results of electrically detected magnetic resonance (EDMR) experiments on ion-implanted Si:P nanostructures at 5 K, consisting of high-dose implanted metallic leads with a square gap, in which phosphorus is implanted at a nonmetallic dose corresponding to 1017 cm-3. By...

  • Drawing graphene nanoribbons on SiC by ion implantation. Tongay, S.; Lemaitre, M.; Fridmann, J.; Hebard, A. F.; Gila, B. P.; Appleton, B. R. // Applied Physics Letters;2/13/2012, Vol. 100 Issue 7, p073501 

    We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 °C below the graphitization temperature (TG) of SiC....

  • FLASH LAMP PROCESSING OF III/V NANOSTRUCTURES IN SILICON. Turek, M.; Prucnal, S.; Voelskow, M.; Mücklich, A.; Liedke, M. O.; Pyszniak, K.; Drozdziel, A.; Zuk, J.; Skorupa, W. // International Conference: Radiation Interaction with Material & ;2012, p632 

    An alternative technique to the epitaxial growth of III-V nanostructures, enabling their integration with Si, is the high fluence ion implantation followed by milliseconds annealing. In the paper formation of the InAs, GaAs and InP nanocrystals in Si is shown. The optoelectronic and...

  • Buried superconducting layers comprised of magnesium diboride nanocrystals formed by ion implantation. Zhai, H. Y.; Christen, H. M.; White, C. W.; Budai, J. D.; Lowndes, D. H.; Meldrum, A. // Applied Physics Letters;6/24/2002, Vol. 80 Issue 25, p4786 

    Superconducting layers of MgB[sub 2] were formed on Si substrates using techniques that are widely used and accepted in the semiconductor industry. Mg ions were implanted into boron films deposited on Si or Al[sub 2]O[sub 3] substrates. After a thermal processing step, buried superconducting...

  • Negative-ion implanter for powders and its application to nanometer-sized metal particle formation in the surface of glass beads. Tsuji, Hiroshi; Kido, Shunsuke; Sasaki, Hitoshi; Gotoh, Yasuhito; Ishikawa, Junzo // Review of Scientific Instruments;Feb2000, Vol. 71 Issue 2, p804 

    Proposes a negative-ion implanter for uniform implantation into each powder surface without particle scattering. Use of negative ions as implant particles in ion implantation; Features of negative-ion implantation into powder; Application to formation of nanosized particles in bead surface.

  • Low-dose n-type nitrogen implants in 4H-SiC. Saks, N. S.; Ryu, S.-H.; Suvorov, A. V. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4958 

    Lightly-doped n-type layers have been fabricated in 4H-SiC by low-dose implantation of nitrogen ions and characterized using the Hall effect. Near-bulk electron mobility is achieved in the implanted layers. Activation rates for the implanted nitrogen ions, energies and densities of the two-level...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics