Observation of ballistic conductance and Aharonov-Bohm oscillations in Si/SiGe heterostructures

Gao, W.X.; Ismail, K.
December 1994
Applied Physics Letters;12/12/1994, Vol. 65 Issue 24, p3114
Academic Journal
Examines the interferometers fabricated from remotely doped silicon/silicon germanide heterostructures. Diameter and linewidths of the loops; Behavior of the Aharonov-Bohm (AB) oscillations in the device; Demonstrates the conductance steps as a function of gate voltage; Correlation between mode staircase and AB oscillations.


Related Articles

  • Aharonov�Bohm Oscillation Amplitude in Small Ballistic Interferometers. Tkachenko, V. A.; Kvon, Z. D.; Sheglov, D. V.; Latyshev, A. V.; Toropov, A. I.; Tkachenko, O. A.; Baksheyev, D. G.; Aseev, A. L. // JETP Letters;2/10/2004, Vol. 79 Issue 3, p136 

    Small-radius (110 nm) ring interferometers were fabricated by the local anodic oxidation of AlGaAs/GaAs heterostructures containing 2D electron gas. Measurements and modeling show that a small ring asymmetry, which is detected by an atomic force microscope, leads to a small amplitude of...

  • Millimeter-wave response and linewidth of Josephson oscillations in YBa[sub 2]Cu[sub 3]O[sub 7].... Divin, Yu.Ya.; Andreev, A.V.; Fischer, G.M.; Mygind, J.; Pedersen, N.F.; Herrmann, K.; Glyantsev, V.N.; Siegel, M.; Braginski, A.I. // Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1295 

    Examines the response of YBa[sub 2]Cu[sub 3]O[sub 7] step-edge junctions to low-intensity millimeter-wave radiation. Determination of the linewidth of the Josephson oscillations by thermal fluctuations; Consideration of the junctions as multijunction multiloop interferometers.

  • Scanning heterodyne laser interferometer for phase-sensitive absolute-amplitude measurements of surface vibrations. Kokkonen, Kimmo; Kaivola, Matti // Applied Physics Letters;2/11/2008, Vol. 92 Issue 6, p063502 

    We describe a scanning heterodyne interferometer for imaging surface vibrations with a wide frequency range, with current electronics, up to 6 GHz. The heterodyne operation facilitates measurement of absolute amplitude and phase of the surface vibration without calibration. Currently, the setup...

  • Observation of built-in electric field in InP self-assembled quantum dot systems. Davydov, V.; Ignatiev, I.; Ren, H.-W.; Sugou, S.; Masumoto, Y. // Applied Physics Letters;5/17/1999, Vol. 74 Issue 20, p3002 

    Studies the Franz-Keldysh oscillations in the nonlinear reflection spectra of heterostructures with InP self-assembled quantum dots. Average size of the quantum dots; Origin of the electric field manifested by the oscillations; Intrinsic defects on the dot interface.

  • Electrically detected and microwave-modulated Shubnikov–de Haas oscillations in an Al[sub 0.4]Ga[sub 0.6]N/GaN heterostructure. Hang, D. R.; Liang, C.-T.; Juang, J.-R.; Huang, Tsai-Yu; Hung, W. K.; Chen, Y. F.; Kim, Gil-Ho; Lee, Jae-Hoon; Lee, Jung-Hee // Journal of Applied Physics;2/15/2003, Vol. 93 Issue 4, p2055 

    We report the drastic enhancement pattern of Shubnikov-de Haas (SdH) oscillations observed in an AlGaN/GaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature is investigated. The underlying mechanism is attributed to the effect of...

  • Anomalous Hall effect in strongly modulated two-dimensional systems. Gumbs, Godfrey; Huang, Danhong // Journal of Applied Physics;10/1/1994, Vol. 76 Issue 7, p4201 

    Presents a study which calculated the longitudinal and Hall resistivities for a two-dimensional square array of scatters, which are simulated by an array of positive delta functions. Possibility concerning heterostructures containing a two-dimensional electron gas; Result of the oscillating...

  • New degrees of freedom in resonant tunneling heterostructure devices. Coon, D. D.; Sorar, E.; Bandara, K. M. S. V.; Urban, N. // Journal of Applied Physics;4/15/1991, Vol. 69 Issue 8, p4344 

    Investigates the lateral degrees of freedom in resonant tunneling heterostructure devices. Relaxation of spatially non-uniform configurations; Discussion on the possibility of non-uniform configurations with spatially localized oscillation; Formulation of the model.

  • Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact. Wieser, U.; Kunze, U.; Ismail, K.; Chu, J. O. // Applied Physics Letters;8/26/2002, Vol. 81 Issue 9, p1726 

    Ballistic constrictions are fabricated on a high-mobility Si/SiGe strained-layer heterostructure which exhibit conductance quantization in units of 4e²/h at T = 4.2 K. Under finite drain voltage a half-plateau develops at 2e²/h and a series of oscillations appear which enable us to extract...

  • Double-barrier THz source based on electrical excitation of electrons and holes. Buot, F.A.; Krowne, C.M. // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p5215 

    Features a detailed dynamic analysis of an all solid-state terahertz (THz) source based on the polarization-induced autonomous oscillation in resonant tunneling heterostructure with staggered band-gap alignment. Operating principle of the device; Analytical modeling of nonlinear dynamics;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics