One-dimensional quantum electron states in n-Al[sub x]Ga[sub 1-x]As/u-GaAs modulation-doped

Vacek, Karel; Sawada, Akemi
December 1994
Applied Physics Letters;12/12/1994, Vol. 65 Issue 24, p3096
Academic Journal
Examines the corrugated interface of n-Al[sub x]Ga[sub 1-x]As/u-gallium arsenide (GaAs) modulation-doped heterojunctions. Values of bending period and angles of the materials; Energy spectrum yielded by quantum-mechanical simulations; Formation of a densely packed quasi-one-dimensional electron gas in the convex corner of the GaAs region.


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