Study of the two-dimensional--three-dimensional growth mode transition in metalorganic vapor

Carlsson, N.; Seifert, W.
December 1994
Applied Physics Letters;12/12/1994, Vol. 65 Issue 24, p3093
Academic Journal
Examines several growth mode transitions in metalorganic vapor phase epitaxy of gallium indium phosphide/indium phosphide quantum wells. Techniques used to optically characterize the material; Limitation of the two-dimensional layer-by-layer growth modes in the quantum wells; Quantum confinement of coherent island types.


Related Articles

  • Selective growth of InGaAs on nanoscale InP islands. Ahopelto, J.; Lipsanen, H. // Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1662 

    Demonstrates the formation of indium gallium arsenide quantum well on nanoscale indium phosphide islands by selective growth using vapor phase epitaxy. Exhibition of intense low-temperature photoluminescence by the structures; Details on the blue blueshift emission; Effect of quantum well...

  • Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy. Turco, F. S.; Tamargo, M. C.; Hwang, D. M.; Nahory, R. E.; Werner, J.; Kash, K.; Kapon, E. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p72 

    We have grown InGaAs/InAlAs quantum wells and InGaAs, InAlAs single layers over InP nonplanar substrates. Photoluminescence, transmission electron microscopy, and energy-dispersive x-ray analysis give evidence for large lateral thickness and compositional variations, which lead to in situ...

  • Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by.... Zhao, J.H.; Lu, Z.; Buchwald, W.; Coblentz, D.; McAfee, S. // Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2810 

    Examines the characteristics of sulfur-doped low pressure metalorganic vapor phase epitaxy indium phosphide/indium gallium arsenic phosphide single quantum wells. Use of admittance spectroscopy; Carrier emission from the sulfur shallow impurity state and quantum well; Electron emission rate of...

  • Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy. Wang, T. Y.; Fry, K. L.; Persson, A.; Reihlen, E. H.; Stringfellow, G. B. // Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p290 

    InP/GaInAs/InP quantum well structures have been grown using atmospheric pressure organometallic vapor phase epitaxy (OMVPE). For thin wells the 10 K photoluminescence spectra show a clearly resolved doublet (or in some cases a triplet). The energy separation of the two peaks increase with...

  • Optical investigation of quantum-well fluctuations in In0.53Ga0.47As/InP superlattices. Sauer, R.; Harris, T. D.; Tsang, W. T. // Journal of Applied Physics;10/15/1987, Vol. 62 Issue 8, p3374 

    Focuses on multiple quantum wells of indium-gallium-arsenic/indium phosphide grown by chemical beam epitaxy. Fluctuations in the quantum wells along the growth direction; Halfwidths of single line emission samples; Trends in the behavior of the multiline components.

  • Quaternary GaInAsN with high In content: Dependence of band gap energy on N content. Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Ko¨hler, K.; Herres, N.; Wagner, J. // Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2448 

    Quaternary pseudomorphically strained GaInAsN films and double-quantum wells were grown by plasma assisted molecular-beam epitaxy on an InP substrate. The In content ranged from 53% to 70% while the N content was varied between 0% and 2.4%. A reduction of compressive strain and a low-energy...

  • Electronic properties of In0.53Ga0.47As-InP single quantum wells grown by chemical beam epitaxy. Frei, Michel; Tsui, D. C.; Tsang, W. T. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p606 

    In0.53Ga0.47As-InP single quantum well (SQW) structures grown by chemical beam epitaxy (CBE) were studied using low-field magnetotransport, the quantum Hall effect, and far-infrared cyclotron resonance measurements at 4.2 K. We compare results on the two-dimensional electron gas (2DEG) in the...

  • Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm. Tsang, W. T. // Applied Physics Letters;1984, Vol. 44 Issue 3, p288 

    Current injection Ga0.47In0.53As/InP multiquantum well heterostructure lasers operating at 1.53 μm have been successfully prepared by molecular beam epitaxy. These lasers consist of four ∼70 Å Ga0.47In0.53As wells and three ∼150 Å InP barriers. The threshold current density...

  • Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy. Temkin, H.; Panish, M. B.; Logan, R. A. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p978 

    We have studied properties of mesa and waveguide p-i-n detectors fabricated from multiple quantum well structures grown by gas source molecular beam epitaxy. With 50 InGaAs wells, each approximately 120 Å thick, mesa detectors show quantum efficiency of up to 77% at 1.56 μm and a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics