TITLE

Study of the two-dimensional--three-dimensional growth mode transition in metalorganic vapor

AUTHOR(S)
Carlsson, N.; Seifert, W.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/12/1994, Vol. 65 Issue 24, p3093
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines several growth mode transitions in metalorganic vapor phase epitaxy of gallium indium phosphide/indium phosphide quantum wells. Techniques used to optically characterize the material; Limitation of the two-dimensional layer-by-layer growth modes in the quantum wells; Quantum confinement of coherent island types.
ACCESSION #
4241435

 

Related Articles

  • Selective growth of InGaAs on nanoscale InP islands. Ahopelto, J.; Lipsanen, H. // Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1662 

    Demonstrates the formation of indium gallium arsenide quantum well on nanoscale indium phosphide islands by selective growth using vapor phase epitaxy. Exhibition of intense low-temperature photoluminescence by the structures; Details on the blue blueshift emission; Effect of quantum well...

  • Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxy. Turco, F. S.; Tamargo, M. C.; Hwang, D. M.; Nahory, R. E.; Werner, J.; Kash, K.; Kapon, E. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p72 

    We have grown InGaAs/InAlAs quantum wells and InGaAs, InAlAs single layers over InP nonplanar substrates. Photoluminescence, transmission electron microscopy, and energy-dispersive x-ray analysis give evidence for large lateral thickness and compositional variations, which lead to in situ...

  • Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by.... Zhao, J.H.; Lu, Z.; Buchwald, W.; Coblentz, D.; McAfee, S. // Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2810 

    Examines the characteristics of sulfur-doped low pressure metalorganic vapor phase epitaxy indium phosphide/indium gallium arsenic phosphide single quantum wells. Use of admittance spectroscopy; Carrier emission from the sulfur shallow impurity state and quantum well; Electron emission rate of...

  • Atomic steps at GaInAs/InP interfaces grown by organometallic vapor phase epitaxy. Wang, T. Y.; Fry, K. L.; Persson, A.; Reihlen, E. H.; Stringfellow, G. B. // Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p290 

    InP/GaInAs/InP quantum well structures have been grown using atmospheric pressure organometallic vapor phase epitaxy (OMVPE). For thin wells the 10 K photoluminescence spectra show a clearly resolved doublet (or in some cases a triplet). The energy separation of the two peaks increase with...

  • Optical investigation of quantum-well fluctuations in In0.53Ga0.47As/InP superlattices. Sauer, R.; Harris, T. D.; Tsang, W. T. // Journal of Applied Physics;10/15/1987, Vol. 62 Issue 8, p3374 

    Focuses on multiple quantum wells of indium-gallium-arsenic/indium phosphide grown by chemical beam epitaxy. Fluctuations in the quantum wells along the growth direction; Halfwidths of single line emission samples; Trends in the behavior of the multiline components.

  • Quaternary GaInAsN with high In content: Dependence of band gap energy on N content. Serries, D.; Geppert, T.; Ganser, P.; Maier, M.; Ko¨hler, K.; Herres, N.; Wagner, J. // Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2448 

    Quaternary pseudomorphically strained GaInAsN films and double-quantum wells were grown by plasma assisted molecular-beam epitaxy on an InP substrate. The In content ranged from 53% to 70% while the N content was varied between 0% and 2.4%. A reduction of compressive strain and a low-energy...

  • Electronic properties of In0.53Ga0.47As-InP single quantum wells grown by chemical beam epitaxy. Frei, Michel; Tsui, D. C.; Tsang, W. T. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p606 

    In0.53Ga0.47As-InP single quantum well (SQW) structures grown by chemical beam epitaxy (CBE) were studied using low-field magnetotransport, the quantum Hall effect, and far-infrared cyclotron resonance measurements at 4.2 K. We compare results on the two-dimensional electron gas (2DEG) in the...

  • Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm. Tsang, W. T. // Applied Physics Letters;1984, Vol. 44 Issue 3, p288 

    Current injection Ga0.47In0.53As/InP multiquantum well heterostructure lasers operating at 1.53 μm have been successfully prepared by molecular beam epitaxy. These lasers consist of four ∼70 Å Ga0.47In0.53As wells and three ∼150 Å InP barriers. The threshold current density...

  • Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy. Temkin, H.; Panish, M. B.; Logan, R. A. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p978 

    We have studied properties of mesa and waveguide p-i-n detectors fabricated from multiple quantum well structures grown by gas source molecular beam epitaxy. With 50 InGaAs wells, each approximately 120 Å thick, mesa detectors show quantum efficiency of up to 77% at 1.56 μm and a...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics