Influence of fluorine preamorphization on the diffusion and activation of low-energy implanted

Huang, T.H.; Kinoshita, H.
October 1994
Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1829
Academic Journal
Examines the diffusion and activation of low-energy implanted boron (B) in fluorine (F) preamorphized silicon during rapid thermal annealing. Formation of shallow junctions with reduced junction depth and increased B activation; Accumulation of F near the surface and at end-of-range defects; Effect of the interaction of F with the defects.


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