TITLE

Influence of fluorine preamorphization on the diffusion and activation of low-energy implanted

AUTHOR(S)
Huang, T.H.; Kinoshita, H.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1829
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the diffusion and activation of low-energy implanted boron (B) in fluorine (F) preamorphized silicon during rapid thermal annealing. Formation of shallow junctions with reduced junction depth and increased B activation; Accumulation of F near the surface and at end-of-range defects; Effect of the interaction of F with the defects.
ACCESSION #
4241409

 

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