Defect generation in 3.5 nm silicon dioxide films

Buchanan, D.A.; DiMaria, D.J.
October 1994
Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1820
Academic Journal
Measures the generation of defects in thin 3.5 nanometer silicon dioxide as a function of the average electron energy and total injected fluence. Manifestation of defects as positive charge; Occurrence of the defect generation; Result of increased processing complexities.


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