TITLE

Deep donor state of vanadium in cubic silicon carbide (3C-SiC)

AUTHOR(S)
Dombrowski, K.F.; Kaufmann, U.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1811
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Determines the energy levels of deep vanadium donor in 3C-silicon carbide by a photo-electron spin resonance study at E[sub v]+1.7 electronvolt. Description of undoped bulk 3C-silicon carbide single crystal; Presentation of valence discontinuity at 3C-silicon carbide/6H-silicon carbide interface; Explanation on the nonoccurrence of intra-3d-shell infrared luminescence.
ACCESSION #
4241402

 

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