Deep donor state of vanadium in cubic silicon carbide (3C-SiC)

Dombrowski, K.F.; Kaufmann, U.
October 1994
Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1811
Academic Journal
Determines the energy levels of deep vanadium donor in 3C-silicon carbide by a photo-electron spin resonance study at E[sub v]+1.7 electronvolt. Description of undoped bulk 3C-silicon carbide single crystal; Presentation of valence discontinuity at 3C-silicon carbide/6H-silicon carbide interface; Explanation on the nonoccurrence of intra-3d-shell infrared luminescence.


Related Articles

  • Energy level alignment at Alq/metal interfaces. Lee, S. T.; Hou, X. Y.; Mason, M. G.; Tang, C. W. // Applied Physics Letters;3/30/1998, Vol. 72 Issue 13 

    The energy level alignment for both Mg/8-hydroxyquinoline aluminum (Alq) and Au/Alq interfaces has been determined by the ultraviolet photoemission measurements. For both interfaces, the difference between the Fermi level and the low-energy edge of the highest occupied molecular orbital (HOMO)...

  • Occupation probability for acceptor in Al-implanted p-type 4H–SiC. Matsuura, Hideharu; Sugiyama, Koichi; Nishikawa, Kazuhiro; Nagata, Takashi; Fukunaga, Nobuya // Journal of Applied Physics;8/15/2003, Vol. 94 Issue 4, p2234 

    Al-implanted p-type 4H-SiC layers with different implantation and annealing temperatures are formed, and the temperature dependence of the hole concentration p(T) is obtained by Hall-effect measurements. The Al acceptor level in SiC is deep (∼180 meV), and its first excited state level...

  • Shallow electron traps at the 4H-SiC/SiO[sub 2] interface. Afanas'ev, V. V.; Stesmans, A.; Bassler, M.; Pensl, G.; Schulz, M. J. // Applied Physics Letters;1/17/2000, Vol. 76 Issue 3 

    Low-temperature electrical measurements and photon-stimulated electron tunneling experiments reveal the presence of a high density of interface states at around 0.1 eV below the conduction band of 4H-SiC at its interface with thermally grown SiO[sub 2]. These states, related to defects in the...

  • On the correlation between the carbon content and the electrical quality of thermally grown oxides on p-type 6H–Silicon carbide. Vathulya, Vickram R.; Ning Wang, Dong; White, Marvin H. // Applied Physics Letters;10/12/1998, Vol. 73 Issue 15 

    Thermal oxides on p-type silicon carbide exhibit high densities of interface states and fixed charge. Understanding the effect of the oxide composition on the electrical properties is imperative to improve the quality of oxides on p-type silicon carbide. In this work, we use angle resolved x-ray...

  • Single Quantum Dot Nanowire Photodetectors.  // Research Journal of Physics;2011, Vol. 5 Issue 2, p52 

    No abstract available.

  • Metastability at the displacement of a fluid in a Hele-Shaw cell. Martyushev, L.; Birzina, A. // JETP Letters;Jun2014, Vol. 99 Issue 8, p446 

    The displacement of silicon oil by air (with a constant flow rate) in a radial Hele-Shaw cell has been studied experimentally. The initially circular air-oil interface is perturbed controllably by a harmonic law. The sub-sequent evolution of such perturbations has been examined. It has been...

  • Energy level evolution at a silole/magnesium thin-film interface. Mäkinen, A. J.; Uchida, M.; Kafafi, Z. H. // Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3889 

    Photoemission spectroscopy of an interface formed through step-by-step deposition of Mg onto a film of a silole derivative, 2,5-bis[6[sup ′]-(2[sup ′],2[sup ″]-bipyridyl)]-1,1-dimethyl-3,4-diphenyl silacyclopentadiene (PyPySPyPy), reveals the formation of gap states arising...

  • Search for an optimal interfacing of subantennae in superantenna of photosynthetic green bacteria from Oscillochloridaceae family: Model calculations. Zobova, A. V.; Taisova, A. S.; Fetisova, Z. G. // Doklady Biochemistry & Biophysics;Aug2010, Vol. 433 Issue 1, p148 

    The article presents a study on Oscillochloris (Osc.) trichoides superantenna for the energy transfer optimization. The study used a three-dimensional antenna with translational symmetry. Results show that the time for direct excitation energy transfer, decreases after the intermediate...

  • Photoemission study of the electronic structures of tris-(8-hydroxyquinoline) aluminum/Li2O/Al interfaces. Cho, K.; Cho, S. W.; Whang, C.-N.; Jeong, K.; Kang, S. J.; Yi, Y. // Applied Physics Letters;9/17/2007, Vol. 91 Issue 12, p122101 

    The electronic structures of tris-(8-hydroquinoline) aluminum (Alq3)/Li2O/Al interfaces were studied using in situ ultraviolet and x-ray photoelectron spectroscopies (UPS and XPS). The UPS and XPS spectra allowed us to evaluate the complete energy level diagrams and to analyze the chemical...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics