Effect of grain boundaries on the formation of luminescent porous silicon from polycrystalline

Guyader, P.; Joubert, P.
October 1994
Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1787
Academic Journal
Investigates the effect of grain boundaries on the formation of luminescent porous silicon from polycrystalline silicon films. Use of electrochemical etching under illumination; Analyses of the nanostructures by microscopy; Dependence of the mode of growth on the initial microstructures of the poly-silicon films.


Related Articles

  • Determination of grain-boundary parameters of polycrystalline silicon by ac electron-beam-induced current. Romanowski, A.; Wittry, D. B. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4601 

    Presents a study that described a method for determining the grain-boundary parameters in polycrystalline silicon solar cell semiconductor by alternating current electron-beam-induced current. Background on the first harmonic of the short-circuit current; Measurement of the grain boundaries of...

  • Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities. Takahashi, Isao; Usami, Noritaka; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki; Stokkan, Gaute; Nakajima, Kazuo // Journal of Applied Physics;Feb2011, Vol. 109 Issue 3, p033504 

    We investigated impact of type of crystal defects in multicrystalline Si (mc-Si) on electrical properties and their change after gettering process of impurities. A bundle of dislocations gives negative impact on the gettering process, while Σ3 grain boundaries does not affect at all. In...

  • Experimental and computational investigations of the fractal pattern formation in the metal/semiconductor bilayer films. Koyama, T.; Doi, M. // AIP Conference Proceedings;2000, Vol. 519 Issue 1, p185 

    © 2000 American Institute of Physics.

  • Average widths of grain boundaries in nanophase alloys synthesized by mechanical attrition. Fultz, B.; Kuwano, H.; Ouyang, H. // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3458 

    Presents information on a study which examined the average widths of grain boundaries in nanophase alloys synthesized by mechanical attrition. Experimental procedure; Results; Discussion.

  • Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation. Perevoshchikov, V. A.; Skupov, V. D. // Technical Physics Letters;Apr99, Vol. 25 Issue 4, p315 

    Experimemal data on the dissolution of microdefects in the near-surface regions of silicon single crystals during the electrochemical formation of porous silicon layers followed by argonion irradiation are presented. A decrease in the microdefect concentration is detected near the interface with...

  • Microstructure of porous silicon. Nakajima, A.; Ohshima, Y.; Itakura, T.; Goto, Y. // Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2631 

    Examines the microstructure of porous silicon (Si). Distribution of Si microcrystals throughout the porous Si; Application of photoluminescence from porous Si in Si-based optoelectronics; Observation of particlelike Si structure by scanning electron microscopy.

  • Photosensitivity of porous silicon-silicon heterostructures. Astrova, E. V.; Lebedev, A. A.; Remenyuk, A. D.; Rud’, Yu. V.; Rud’, V. Yu. // Semiconductors;Feb97, Vol. 31 Issue 2, p121 

    Data from experimental studies of the photoelectric properties of heterostructures of porous and single-crystal silicon are presented. Rectifying heterostructures with photosensitivities of up to 1 mA/W at 300 K in the spectral range 1.2-2.3 eV are obtained. Oscillations in the photocurrent due...

  • On the electronic properties of a single dislocation. Reiche, Manfred; Kittler, Martin; Erfurth, Wilfried; Pippel, Eckhard; Sklarek, Kornelia; Blumtritt, Horst; Haehnel, Angelika; Uebensee, Hartmut // Journal of Applied Physics;2014, Vol. 115 Issue 19, p194303-1 

    A detailed knowledge of the electronic properties of individual dislocations is necessary for next generation nanodevices. Dislocations are fundamental crystal defects controlling the growth of different nanostructures (nanowires) or appear during device processing. We present a method to record...

  • Inverse Hall—Petch Like Mechanical Behaviour in Nanophase Al—Cu—Fe Quasicrystals: A New Phenomenon. MUKHOPADHYAY, N. K.; ALI, F.; SCUDINO, S.; SAMADI KHOSHKHOO, M.; STOICA, M.; SRIVASTAVA, V. C.; UHLENWINKEL, V.; VAUGHAN, G.; SURYANARAYANA, C.; ECKERT, J. // Acta Physica Polonica, A.;Aug2014, Vol. 126 Issue 2, p543 

    The structural and mechanical stability of quasicrystals are important issues due to their potential for possible applications at high temperatures and stresses. The aim of the present work is, therefore, to review the earlier works on conventional crystalline and quasicrystalline materials and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics