Thermal annealing of buried Al barrier layers to passivate the surface of copper films

Ding, P.J.; Wang, W.
October 1994
Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1778
Academic Journal
Investigates annealed metallic bilayers consisting copper/aluminum/ silicon dioxide. Provision of surface passivation and diffusion barrier/adhesion promoter function for advanced copper based metallization; Proximation of the resistivity of annealed films; Comparison of samples with pure copper films.


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