InGaAs/GaAs quantum well lasers with dry-etched mirror passivated by vacuum atomic layer epitaxy

Frateschi, N.C.; Jow, M.Y.
October 1994
Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1748
Academic Journal
Investigates indium gallium arsenide/gallium arsenide quantum well lasers with dry-etched mirror passivated by vacuum atomic layer epitaxy. Study of the threshold current of the devices; Improvement of mirror feedback; Increase of surface roughness on (011) planes.


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