TITLE

InGaAs/GaAs quantum well lasers with dry-etched mirror passivated by vacuum atomic layer epitaxy

AUTHOR(S)
Frateschi, N.C.; Jow, M.Y.
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1748
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates indium gallium arsenide/gallium arsenide quantum well lasers with dry-etched mirror passivated by vacuum atomic layer epitaxy. Study of the threshold current of the devices; Improvement of mirror feedback; Increase of surface roughness on (011) planes.
ACCESSION #
4241381

 

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