Response to 'Comment om 'Time dependence of dopant diffusion in delta-doped Si films and

Gossmann, H.-J.; Rafferty, C.S.
September 1994
Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1322
Academic Journal
Responds to the comment on the study on the diffusion of dopants in silicon films. Problems encountered in ion implantation experiments; Indication of the formation of shoulders in the concentration versus depth profile of a diffusing dopant peak; Difference of the diffusive behavior of the dopant atoms in different concentrations.


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