TITLE

Response to 'Comment om 'Time dependence of dopant diffusion in delta-doped Si films and

AUTHOR(S)
Gossmann, H.-J.; Rafferty, C.S.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1322
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Responds to the comment on the study on the diffusion of dopants in silicon films. Problems encountered in ion implantation experiments; Indication of the formation of shoulders in the concentration versus depth profile of a diffusing dopant peak; Difference of the diffusive behavior of the dopant atoms in different concentrations.
ACCESSION #
4241374

 

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