Comment on 'Time dependence of dopant diffusion in delta-doped Si films and properties of Si

Antoncik, E.
September 1994
Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1320
Academic Journal
Comments on the study on the diffusion of antimony and boron dopants in silicon thin films. Details on the existence or absence of transient enhancement in arsenic implanted silicon; Influence of the solubility limit on the system of reaction-diffusion equation; Calculation of the concentration profiles of implanted, predeposited and delta-doped silicon.


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