On the generation of interface states from electron-hole recombination in

Buchanan, D.A.
September 1994
Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1257
Academic Journal
Investigates the generation of interface states occurring from recombination of electrons and trapped holes. Generation rates of recombination occurring away from the silicon/silicon oxide interface; Mechanism for the interface state density production; Details on the generation rates for recombination occurring near the Si/SiO[sub 2] interface.


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