TITLE

On the generation of interface states from electron-hole recombination in

AUTHOR(S)
Buchanan, D.A.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1257
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the generation of interface states occurring from recombination of electrons and trapped holes. Generation rates of recombination occurring away from the silicon/silicon oxide interface; Mechanism for the interface state density production; Details on the generation rates for recombination occurring near the Si/SiO[sub 2] interface.
ACCESSION #
4241352

 

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