Modulation-doped n-type Si/SiGe with inverted interface

Ismail, K.; Chu, J.O.
September 1994
Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1248
Academic Journal
Examines an inverted modulation-doped silicon/silicon germanium heterostructure. Information on the mobility and charge density of the measured samples using gated Hall measurements; Details on the peak room temperature mobility of the samples; Advantages of the layer design in inducing sheet charge density.


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