TITLE

Modulation-doped n-type Si/SiGe with inverted interface

AUTHOR(S)
Ismail, K.; Chu, J.O.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1248
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines an inverted modulation-doped silicon/silicon germanium heterostructure. Information on the mobility and charge density of the measured samples using gated Hall measurements; Details on the peak room temperature mobility of the samples; Advantages of the layer design in inducing sheet charge density.
ACCESSION #
4241348

 

Related Articles

  • Observation of piezoelectric field induced carriers in AlGaAs/InGaAs strained-layer.... Li, X.; Longenbach, K.F. // Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1513 

    Measure the Hall effect of gallium arsenide/aluminum gallium arsenide/indium gallium arsenide strained-layer heterostructures. Impact of the two-dimensional carrier density as a strong function of growth orientation; Consistency of the carrier density changes with the generation of...

  • Study of photoconductivity in AlxGa1-xAs/GaAs modulation-doped heterostructures. Peng, Zhongling; Saku, Tadashi; Horikoshi, Yoshiji // Journal of Applied Physics;4/1/1996, Vol. 79 Issue 7, p3592 

    Presents a study which examined the photoconductivity of AlGaAs/gallium arsenide modulation-doped heterostructures by temperature-variable Hall effect measurement. Background on the sample material; Details on the experimental setup; Results.

  • Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge[sub 1-x]Si[sub x] heterostructures. Arapov, Yu. G.; Gorodilov, N. A.; Neverov, V. N.; Kharus, G. I.; Shelushinina, N. G. // Semiconductors;Mar1997, Vol. 31 Issue 3, p222 

    For multilayer Ge/Ge[sub 1-x]Si[sub x] (x...0.03) heterostructures with two-dimensional p-type conductivity over the Ge layers, the temperature and magnetic dependences of the longitudinal resistivity ρ[sub xx] and the Hall resistivity ρ[sub xy] have been studied in fields up to 12 T in...

  • Evaluation of Mobility Gaps and Density of Localized Hole States in p-Ge/Ge[sub 1 – ][sub x]Si[sub x] Heterostructures in the Quantum Hall Effect Mode. Arapov, Yu. G.; Kuznetsov, O. A.; Neverov, V. N.; Kharus, G. I.; Shelushinina, N. G.; Yakunin, M. V. // Semiconductors;May2002, Vol. 36 Issue 5, p519 

    The temperature (0.1 K ... T ... 20 K) and magnetic field (0 T ... B ... 12 T) dependences of the longitudinal (ρ[sub xx]) and Hall (ρ[sub xy]) resistivities have been studied in detail for p-Ge/Ge[sub 1-x]Si[sub x] (x = 0.07) multilayer heterostructures with hole density p = (2.4-2.6)...

  • Novel electro-optical phase modulator based on GaInAs/InP modulation-doped quantum-well structures. Thirstrup, C. // Applied Physics Letters;11/30/1992, Vol. 61 Issue 22, p2641 

    Analyzes the electro-optical phase modulator based on gallium indium arsenide/indium phosphide modulation-doped quantum-well (Q-W) structures. Comparison between electro-optical phase modulator and quantum confined Stark effect modulators; Basis for the proposed device; Use of varying equations...

  • Two-dimensional electron gas mobility anomalies (and enhancement) in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures. Litwin-Staszewska, E.; Suski, T.; Skierbiszewski, C.; Kobbi, F.; Robert, J. L.; Mosser, V. // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p405 

    Presents a study that examined the variation of two-dimensional electron gas mobility with carrier concentration for different modulation-doped heterostructures of AlGaAs/InGaAs/GaAs. Characteristics of the samples investigated; Procedures for high-pressure freeze-out; Experimental methods...

  • Dual Hall effect in inhomogeneous doubly connected GaAs/AlGaAs heterostructure devices. Mani, R.G. // Applied Physics Letters;5/26/1997, Vol. 70 Issue 21, p2879 

    Examines the Hall effect in inhomogeneous doubly connected gallium arsenide/AlGaAs heterostructure devices. Sensitivity of Hall resistance to connectivity between the source and the drain; Variation of the interior and exterior Hall resistances; Changes in the electron density induced by the...

  • Gated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructures. Ismail, K.; Arafa, M. // Applied Physics Letters;2/13/1995, Vol. 66 Issue 7, p842 

    Examines gated Hall effect measurement in high-electron-mobility modulation-doped silicon/silicon germanide heterostructures. Control of electron density and electron wave function shape using front and back gates; Relationship between electron mobility and electron density; Derivation of peak...

  • Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure. Elhamri, S.; Saxler, A.; Mitchel, W. C.; Elsass, C. R.; Smorchkova, I. P.; Heying, B.; Haus, E.; Fini, P.; Ibbetson, J. P.; Keller, S.; Petroff, P. M.; DenBaars, S. P.; Mishra, U. K.; Speck, J. S. // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6583 

    We have used the Shubnikov-de Haas and the Hall effects to investigate the effect of subband gap illumination on the transport properties of a very high mobility, μ=54 000 cm[sup 2]/V s at T=1.2 K, Al[sub 0.09]GaN[sub 0.91]/GaN heterostructure. We have found that this illumination resulted in...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics