TITLE

Experimental study of implantation-induced disordering in InGaAsP strained

AUTHOR(S)
Elenkrig, B.B.; Thompson, D.A.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1239
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the implantation-induced disordering in strained multiple-quantum-well indium-gallium-arsenic-phosphorus (InGaAsP) hetrostructures. Differences in the ion intermixing processes; Occurrence of spectral blueshift in similar implantation and anneal conditions; Composition differences between wells and barriers.
ACCESSION #
4241345

 

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