TITLE

Composition modulation in lattice matched Zn[sub 1-x]Mg[sub x]S[sub y]Se[sub 1-y/ZnSe buffer

AUTHOR(S)
Kuo, L.H.; Salamanca-Riba, L.
PUB. DATE
September 1994
SOURCE
Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1230
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the composition modulation in lattice matched epitaxial films grown on zinc selenide buffer layers. Details on the correspondence of composition modulation to regions with different silicon and magnesium concentration; Information on the density of defects in the films; Characteristics shown by the samples.
ACCESSION #
4241342

 

Related Articles

  • Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor.... Zhang, G.Y.; Tong, Y.Z. // Applied Physics Letters;12/8/1997, Vol. 71 Issue 23, p3376 

    Examines the relationship between background carrier concentration and defects in gallium nitride (GaN) films grown by vapor phase epitaxy. Use of thermal equilibrium method to calculate background carrier concentration; Influence of N vacancies on carrier concentration; Implications for...

  • Impact of stress on oxygen vacancy ordering in epitaxial (La[sub 0.5]Sr[sub 0.5])CoO[sub 3-∂] thin films. Klenov, Dmitri O.; Donner, Wolfgang; Foran, Brendan; Stemmer, Susanne // Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3427 

    We investigate oxygen vacancy ordering in epitaxial (La[sub 0.5]Sr[sub 0.5])CoO[sub 3 - δ] thin films grown by sputter deposition on (001) LaAlO[sub 3] and (001) SrTiO[sub 3]. After annealing at 500 °C under oxygen partial pressures greater than those used during deposition, films...

  • Point defects in Si thin films grown by molecular beam epitaxy. Gossmann, H.-J.; Asoka-Kumar, P. // Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p540 

    Examines the presence of point defects in silicon (Si) epitaxial films grown by low-temperature molecular beam epitaxy (LT-MBE). Use positron annihilation spectroscopy; Influence of temperature rapid thermal anneal on the crystalline quality of the film; Observation of thick film defects for...

  • Publisher's Note: "Point defect balance in epitaxial GaSb" [Appl. Phys. Lett. 105, 082113(2014)]. Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S. // Applied Physics Letters;10/20/2014, Vol. 105 Issue 16, p1 

    A correction to the article "Point defect balance in epitaxial GaSb" that was published in the August 29, 2014 issue, is presented.

  • Microdefects in Al[sub 2]O[sub 3] films and interfaces revealed by positron lifetime spectroscopy. Jun Xu; Somieski, B. // Applied Physics Letters;11/24/1997, Vol. 71 Issue 21, p3165 

    Investigates the microdefects and interfaces of Al[sub 2]O[sub 3] films on iron and nickel aluminide substrates. Use of positron lifetime spectroscopy; Observation of di-vacancies, vacancy clusters, and microvoids in the oxide scales; Processes involved in the synthesis of alumina layers.

  • Deep level defects in n-type GaN grown by molecular beam epitaxy. Wang, C. D.; Yu, L. S.; Lau, S. S.; Yu, E. T.; Kim, W.; Botchkarev, A. E.; Morkoc¸, H. // Applied Physics Letters;3/9/1998, Vol. 72 Issue 10, p0 

    Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E[sub 1]=0.234±0.006, E[sub 2]=0.578±0.006, E[sub 3]=0.657±0.031, E[sub...

  • Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms. Lu, Guo-Quan; Nygren, Eric; Aziz, Michael J. // Journal of Applied Physics;11/15/1991, Vol. 70 Issue 10, p5323 

    Discusses the implications for point-defect mechanisms of pressure-enhanced crystallization kinetics of amorphous silicon (Si) and germanium (GE). Effects of hydrostatic pressure on solid-phase epitaxial growth rate of intrinsic Ge and Si into their respective self-implanted amorphous phases;...

  • Continuous melting of a driven two-dimensional flux lattice with strong pins. Fruchter, L. // European Physical Journal B -- Condensed Matter;Jul2003, Vol. 34 Issue 2, p173 

    The phase diagram of a driven two-dimensional vortex lattice in the presence of dense quasi-point pins is investigated. The transition from the crystal to the liquid is found continuous at intermediate inductions. The correlations in the pseudo random force that allow for an uncomplete unbinding...

  • Metalorganic vapor phase epitaxial growth and 1.5-mum laser fabrication using.... Ogasawara, Matsuyuki; Sato, Kenji // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1217 

    Examines the epitaxial growth of high-quality indium gallium arsenic phosphide (InGaAsP) lattice matched to InP. Measurement of the carrier concentration of undoped InP and InGaAs; Possibility of compositional control of InGaAsP; Use of the double heterostructure wafers as lasers.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics