Effect of synchrotron radiation on electrical characteristics of SiO[sub x]N[sub y] thin films

Arakawa, Tomiyuki; Yamashita, Yoshio
December 1993
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3364
Academic Journal
Examines the effect of synchroton radiation on electrical characteristics of SiO[sub x]N[sub y] dielectric thin films. Formation of dielectric films by rapid thermal processing in N[sub 2]O ambient; Comparison between metal-oxide semiconductors patterned by synchrotron radiation lithography and conventional optical lithography.


Related Articles

  • Lead zirconate titanate films by rapid thermal processing. Kumar, C.V.R. Vasant; Sayer, M.; Pascual, R.; Amm, D.T.; Wu, Z.; Swanson, D.M. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1161 

    Discusses the fabrication of lead zirconate titanate films by a direct current sputtering technique with a post deposition rapid thermal annealing treatment. Exhibition of good structural, dielectric and ferroelectric properties compared to conventional furnace-annealed films; measured...

  • High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient. Yao, Z.-Q.; Harrison, H.B. // Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3584 

    Analyzes high quality ultrathin dielectric films grown in a nitric oxide ambient using rapid thermal processing. Determination of the distribution of nitrogen concentration in the dielectric films; Correlation between high nitrogen concentration at the interface and reduction of the dielectric...

  • Characterization of ultra-thin dielectric films buried under poly-Si electrodes using x-ray reflectivity. Park, C.; Ji, S.; Lee, K.-B.; Youn, S. B.; Park, J.-C.; Choi, H. // AIP Conference Proceedings;2001, Vol. 550 Issue 1, p605 

    Probe of deep buried gate dielectric thin films under poly-Si electrode capping layer by x-ray reflectivity using synchrotron radiation has been demonstrated. The structural variation in gate insulator was observed sensitively and the depth profiles of density were obtained with depth resolution...

  • Thermal Stability Studies of Advanced Gate Stack Structures on Si (100). Sivasubramani, P.; Zhao, P.; Kim, M. J.; Gnade, B. E.; Wallace, R. M.; Edge, L. F.; Schlom, D. G.; Parsons, G. N.; Misra, V. // AIP Conference Proceedings;2005, Vol. 788 Issue 1, p156 

    The thermal stability of high-k gate dielectrics and metal gate stack materials under consideration for ULSI technology must be examined for their integration into the MOSFET process flow. In this study, we evaluate the thermal stability of amorphous lanthanum aluminate (LaAlO3) thin films and...

  • Metal-oxide-high-k-oxide-silicon memory structure incorporating a Tb2O3 charge trapping layer. Tung-Ming Pan; Ji-Shing Jung; Fa-Hsyang Chen // Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p012906 

    In this paper, we proposed a metal-oxide-high-k-oxide-silicon (MOHOS)-type memory structure fabricating a high-k Tb2O3 charge trapping layer for flash memory applications. The high-k Tb2O3 MOHOS-type memories annealed at 800 °C exhibited large threshold voltage shifting (memory window of...

  • Electrical and structural properties of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films. Choi, Chel-Jong; Jang, Moon-Gyu; Kim, Yark-Yeon; Jun, Myung-Sim; Kim, Tae-Youb; Song, Myeong-Ho // Applied Physics Letters;7/2/2007, Vol. 91 Issue 1, p012903 

    The authors investigate the electrical and structural properties of high-k Er-silicate film formed by the interfacial reaction between Er and SiO2 films. The increase in rapid thermal annealing temperature leads to the reduction of the interface trap density by one order of magnitude, indicating...

  • Effect of rapid thermal annealing on the properties of thin dielectric films of gadolinium, titanium, and erbium oxides on the silicon carbide surface. Bacherikov, Yu.; Dmitruk, N.; Konakova, R.; Kondratenko, O.; Lytvyn, O.; Milenin, V.; Okhrimenko, O.; Kapitanchuk, L.; Svetlichnyi, A.; Polyakov, V.; Shelcunov, A. // Technical Physics;Feb2007, Vol. 52 Issue 2, p253 

    The effect of rapid thermal annealing on the properties of Ti, Ga, and Er oxide films on silicon carbide are studied by the methods of atomic force microscopy, monochromatic ellipsometry, optical absorption, and photoluminescence. The atomic composition of these films is analyzed as a function...

  • Characterization of oxygen and nitrogen rapid thermal annealing processes for ultra-low-k SiCOH films. Sungwoo Lee; Donggeun Jung; Jaeyoung Yang; Jin-hyo Boo; Hyoungsub Kim; Jaewon Lee; Heeyeop Chae // Journal of Materials Research;Mar2008, Vol. 23 Issue 3, p5 

    Rapid thermal annealing (RTA) processing under N2 and O2 ambient is suggested and characterized in this work for improvement of SiCOH ultra-low-k (k = 2.4) film properties. Low-k film was deposited by plasma-enhanced chemical vapor deposition (PECVD) with decamethylcyclopentasiloxane and...

  • Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition. Qiu, X. Y.; Liu, H. W.; Fang, F.; Ha, M. J.; Liu, Z. G.; Liu, J.-M. // Applied Physics Letters;5/1/2006, Vol. 88 Issue 18, p182907 

    The interfacial properties of high-k dielectric CaZrOx thin films deposited by pulsed laser deposition in O2 and N2 ambient are investigated. The SiOx (x<2) interfacial layer is observed for the films deposited at 300 °C in 20 Pa O2. Rapid thermal annealing (RTA) of the films at 700 °C in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics