TITLE

Hydrogen desorption kinetics from the growing Si(100) surface during silane gas-source molecular

AUTHOR(S)
Kim, K.-J.; Suemitsu, M.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3358
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the hydrogen desorption kinetics from silicon(100) surfaces during silane gas-source molecular beam epitaxy. Dependence of temperature on growth rates and surface hydrogen coverage; Analysis on the reaction order and activation energy of surface hydrogen; Presence of higher order kinetics on the atomically clean surfaces.
ACCESSION #
4241324

 

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