Hydrogen desorption kinetics from the growing Si(100) surface during silane gas-source molecular

Kim, K.-J.; Suemitsu, M.
December 1993
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3358
Academic Journal
Investigates the hydrogen desorption kinetics from silicon(100) surfaces during silane gas-source molecular beam epitaxy. Dependence of temperature on growth rates and surface hydrogen coverage; Analysis on the reaction order and activation energy of surface hydrogen; Presence of higher order kinetics on the atomically clean surfaces.


Related Articles

  • Scanning tunneling microscope based fabrication of nano- and atomic scale dopant devices in silicon: The crucial step of hydrogen removal. Hallam, T.; Reusch, T. C. G.; Oberbeck, L.; Curson, N. J.; Simmons, M. Y. // Journal of Applied Physics;2/1/2007, Vol. 101 Issue 3, p034305 

    The use of a scanning tunneling microscope (STM) to pattern a hydrogen resist on the Si(001) surface has recently become a viable route for the fabrication of nanoscale planar doped devices in silicon. A crucial step in this fabrication process is the removal of the hydrogen resist after STM...

  • Desorption of triethylgallium during metalorganic molecular beam epitaxial growth of GaAs. Uneta, M.; Watanabe, Y.; Ohmachi, Y. // Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2327 

    The desorption of triethylgallium (TEGa) adsorbed on As- and Ga-terminated surfaces during metalorganic molecular beam epitaxial (MOMBE) growth of GaAs is investigated by measuring the As flux dependence of the growth rate. The growth rate decreases with decreasing As flux in the substrate...

  • Surfactant effect of atomic H on Si incorporation in GaAs. Zhongling Peng; Horikoshi, Yoshiji // Applied Physics Letters;2/3/1997, Vol. 70 Issue 5, p604 

    Examines the effect of atomic hydrogen on silicon incorporation in gallium arsenide substrate during molecular beam epitaxy process. Effect of atomic H irradiation on gallium and arsenic migration; Dependence of free-carrier concentration on arsenic[sub 4]and gallium flux ratio; Correlation...

  • Oxide desorption from InP under stabilizing pressures of P[sub 2] or As[sub 4]. Averbeck, R.; Riechert, H.; Schlotterer, H.; Weimann, G. // Applied Physics Letters;9/30/1991, Vol. 59 Issue 14, p1732 

    Investigates the oxide desorption process of indium phosphide under molecular-beam epitaxy conditions. Calculation for the thickness and composition of the surface layer; Observation of oxide desorption and reconstruction under P[sub 2] stabilization; Role of temperature for the complete...

  • The origin of gallium desorption transients during AlGaAs/GaAs heterointerface formation by.... Mahalingam, K.; Dorsey, D.L. // Applied Physics Letters;6/9/1997, Vol. 70 Issue 23, p3143 

    Examines the gallium thermal desorption behavior at AlGaAs/gallium arsenide heterointerface during growth by molecular beam epitaxy using a Monte Carlo simulation. Factors affecting the transients in gallium desorption rates upon the aluminum shutter opening and closing; Use of constant V/III...

  • Surface treatment of (1102) sapphire and (100) silicon for molecular beam epitaxial growth. Christou, A.; Richmond, E. D.; Wilkins, B. R.; Knudson, A. R. // Applied Physics Letters;1984, Vol. 44 Issue 8, p796 

    A low-temperature surface preparation technique for molecular beam epitaxial growth of silicon on sapphire and silicon is described. Thermal desorption of regrown oxide has been accomplished at 850 °C and epitaxial growth at 650 °C. A comparison of two surface treatment techniques for...

  • Modification of desorption phenomenon of Sb on Si surfaces by atomic hydrogen termination. Nakagawa, Kiyokazu; Kimura, Yoshinobu; Miyao, Masanobu // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1267 

    Sb sticking and desorption on hydrogen terminated and clean Si surfaces are studied using molecular beam epitaxy. When Sb atoms impinge on Si surfaces, Sb atoms accumulate on a clean Si surface in proportion to Sb deposition time, independently of substrate temperature. For a hydrogen terminated...

  • Hydrogenation of undoped and nitrogen-doped CdTe grown by molecular beam epitaxy. Zhonghai Yu; Buczkowski, S.L. // Applied Physics Letters;1/22/1996, Vol. 68 Issue 4, p529 

    Investigates the effect of atomic hydrogen on the growth of undoped and nitrogen-doped cadmium telluride by molecular beam epitaxy. Enhancement of hydrogen (H) incorporation in the presence of nitrogen (N); Formation of N-H complexes using infrared absorption measurements; Intensification of...

  • Low dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integration. Okada, Yoshitaka; Shimomura, Hirofumi; Kawabe, Mitsuo // Journal of Applied Physics;6/1/1993, Vol. 73 Issue 11, p7376 

    Evaluates low -temperature molecular beam epitaxy with atomic hydrogen. Details on the experiments; Information on the reduction mechanism; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics