TITLE

Anisotropic Si(100) etching induced by high translational energy Cl[sub 2] molecular beams

AUTHOR(S)
Teraoka, Yuden; Nishiyama, Iwao
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3355
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the anisotropic silicon(100) etching induced by high translational energy chlorine gas molecular beams. Measurement of the translational energy dependence for etch rates; Observation of 2.1 electron volt energy threshold at 530 degree Celsius; Monitor of chlorine cation intensity ratio by quadruple mass spectrometer.
ACCESSION #
4241323

 

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