Anisotropic Si(100) etching induced by high translational energy Cl[sub 2] molecular beams

Teraoka, Yuden; Nishiyama, Iwao
December 1993
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3355
Academic Journal
Examines the anisotropic silicon(100) etching induced by high translational energy chlorine gas molecular beams. Measurement of the translational energy dependence for etch rates; Observation of 2.1 electron volt energy threshold at 530 degree Celsius; Monitor of chlorine cation intensity ratio by quadruple mass spectrometer.


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