TITLE

Transport mechanism of X band electrons in AlAs electrode through GaAs/AlAs/GaAS structure by

AUTHOR(S)
Tung-Ho Shieh; Si-Chen Lee
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3350
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the transport mechanism of X band electrons through gallium arsenide (GaAs)/aluminum arsenide (AlAs)/GaAs structure with various GaAs well thickness. Observation of longitudinal optical (LO) phonon replica at temperature below 80 Kelvin; Use of AlAs layer as electrodes; Incorporation of LO phonon scattering to satisfy momentum conservation.
ACCESSION #
4241321

 

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