Transport mechanism of X band electrons in AlAs electrode through GaAs/AlAs/GaAS structure by

Tung-Ho Shieh; Si-Chen Lee
December 1993
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3350
Academic Journal
Investigates the transport mechanism of X band electrons through gallium arsenide (GaAs)/aluminum arsenide (AlAs)/GaAs structure with various GaAs well thickness. Observation of longitudinal optical (LO) phonon replica at temperature below 80 Kelvin; Use of AlAs layer as electrodes; Incorporation of LO phonon scattering to satisfy momentum conservation.


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