Study of the interface-state formation at different temperatures

El-Hdiy, Abdelillah
December 1993
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3338
Academic Journal
Presents the study on the interface-state formation in a polycrystalline silicon (Si) gate-oxide-semiconductor capacitor at different temperatures. Range of temperature used in the study; Calculation for concentration profile of boron atoms; Effects of hot electrons on the Si-Si or Si-oxygen distorted bonds.


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