TITLE

Study of the interface-state formation at different temperatures

AUTHOR(S)
El-Hdiy, Abdelillah
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3338
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the study on the interface-state formation in a polycrystalline silicon (Si) gate-oxide-semiconductor capacitor at different temperatures. Range of temperature used in the study; Calculation for concentration profile of boron atoms; Effects of hot electrons on the Si-Si or Si-oxygen distorted bonds.
ACCESSION #
4241317

 

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