X-ray characterization of strain relaxation in InGaAs/GaAs strained-layer superlattices

Jianhua Li; Zhenhong Mai
December 1993
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3327
Academic Journal
Examines the strain relaxation in indium gallium arsenide/gallium arsenide superlattices by double-crystal x-ray diffractometry. Growth of superlattices by molecular beam epitaxy; Measurement of the tilt between multilayer and substrate; Formation of misfit dislocation on the multilayer/substrate interface.


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