TITLE

X-ray characterization of strain relaxation in InGaAs/GaAs strained-layer superlattices

AUTHOR(S)
Jianhua Li; Zhenhong Mai
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3327
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the strain relaxation in indium gallium arsenide/gallium arsenide superlattices by double-crystal x-ray diffractometry. Growth of superlattices by molecular beam epitaxy; Measurement of the tilt between multilayer and substrate; Formation of misfit dislocation on the multilayer/substrate interface.
ACCESSION #
4241312

 

Related Articles

  • Properties of strained In0.2Ga0.8As/GaAs superlattices with various barrier thicknesses. Hovinen, M.; Salokatve, A.; Asonen, H. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3378 

    Presents a study which examined the properties of strained In[sub0.2]Ga[sub0.8]As/gallium arsenide superlattices with various barrier thicknesses. Role of the contact annealing procedure; Recognition of photoconductivity as a tool for electronic transitions; Evidence of large-scale lattice...

  • Strain relaxation of InGaAs/GaAs superlattices by wet oxidation of underlying AlAs layer. Seo, Jin Ho; Seo, Kwang Seok // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    The effects of AlAs wet oxidation on overlayers were investigated using InGaAs/GaAs strained-layer superlattice structures grown on an AlAs layer. The superlattice partially relaxes towards its equilibrium spacing as the result of the oxidation of the underlying AlAs layer. Double-crystal x-ray...

  • Interdiffusion and strain relaxation in (SimGen)p superlattices. Baribeau, J.-M.; Pascual, R.; Saimoto, S. // Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1502 

    We report an x-ray diffraction study of interdiffusion and strain relaxation in (SimGen)p short-period superlattices. An interdiffusion coefficient Dλ was determined by monitoring, as a function of time, the decay upon annealing of the first order 000 satellite peak arising from the...

  • Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch. Hartmann, J.M.; Gallas, B. // Journal of Applied Physics;7/15/1999, Vol. 86 Issue 2, p845 

    Studies the effects of inserting silicon/silicon...germanium... (SiGe) strain-balanced superlattices into Si...Ge... virtual substrates. Experimental details; Determination by x-ray diffraction of the composition and strain site of the SiGe virtual substrates; Determination of the surface and...

  • Double-Crystal X-ray Diffractometry in the Role of X-ray Standing-Wave Method. Afanas�ev, A. M.; Chuev, M. A.; Imamov, R. M.; Pashaev, �. M.; Yakunin, S. N.; Horvat, J. // JETP Letters;11/25/2001, Vol. 74 Issue 10, p498 

    It is shown that the atomic displacements (induced by foreign layers) comparable with or smaller than the interatomic distances can be detected in perfect multilayer systems by double-crystal X-ray diffractometry alone. It was earlier thought that the detection of displacements as small as those...

  • Microscopic bending of GaAs layers grown by epitaxial lateral overgrowth. Zytkiewicz, Z. R.; Domagala, J. // Journal of Applied Physics;12/15/1998, Vol. 84 Issue 12, p6937 

    Discusses the use of X-ray diffraction in studying the influence of the mask material on the properties of gallium arsenic (GaAs) layers. Details on epitaxial lateral overgrowth (ELO); Role of an amorphous mask in ELO; How GaAs ELO layers have been grown.

  • Strain in GaAs layers grown by liquid phase epitaxial lateral overgrowth. Zytkiewicz, Z. R.; Domagala, J. // Journal of Applied Physics;8/15/1999, Vol. 86 Issue 4, p1965 

    Deals with a study that used high resolution x-ray diffraction to examine strain in GaAs layers grown on GaAs substrates by the liquid phase epitaxial lateral overgrowth technique. Experimental procedure; Results; Discussion; Conclusion.

  • Lattice relaxation due to hydrogen passivation in boron-doped silicon. Stutzmann, M.; Harsanyi, J.; Breitschwerdt, A.; Herrero, C. P. // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1667 

    The influence of hydrogen on the lattice constant of boron-doped crystalline silicon is studied by x-ray diffraction. It is found that hydrogen passivation of the boron acceptors is accompanied by a noticeable expansion of the passivated layer. A value of +(2.5±0.5)×10-24 cm3/atom is...

  • Analysis of strain and mosaicity in a short-period Si[sub 9]Ge[sub 6] superlattice by x-ray.... Koppensteiner, E.; Hamberger, P.; Bauer, G.; Holy, V.; Kasper, E. // Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p172 

    Examines the use of x-ray diffractometry for the structural characterization of a short period Si[sub 9]Ge[sub 6] superlattice grown by molecular beam epitaxy. Calculation of the correlation function of the deformation field; Composition of the superlattice layers; Production of the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics