Effects of a predeposited boron layer during the epitaxial growth of Ge on CaF[sub 2]

Cho, C.-C.; Liu, H.-Y.
December 1993
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3291
Academic Journal
Examines the effects of predeposited boron (B) layer on CaF[sub 2] during the epitaxial growth of germanium (Ge). Role of B for suppressing island formation; Implication for the migration of calcium to the Ge surface; Modification of the CaF[sub 2] surface energy.


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