Single-frequency GaInAsSb/AlGaAsSb quantum-well ridge-waveguide lasers emitting at 2.1 mum

Choi, H.K.; Eglash, S.J.
December 1993
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3271
Academic Journal
Examines the single frequency operation of GaInAsSb/AlGaAsSb quantum well ridge-waveguide lasers emitting at 2.1 micrometer. Growth of the heterostructure by molecular beam epitaxy; Details on the continuous wave threshold current at room temperature; Absence of mode hopping over 1.2 nanometers.


Related Articles

  • Quantum cascade laser with plasmon-enhanced waveguide operating at 8.4 mum wavelength. Sirtori, Carlo; Faist, Jerome // Applied Physics Letters;6/12/1995, Vol. 66 Issue 24, p3242 

    Describes a quantum cascade laser with plasmon-enhanced waveguide operating at a 8.4 micrometer wavelength. Deposition of the structure by molecular beam epitaxy in the semiconductor material systems; Optimization of the waveguide design; Estimation of the threshold current density and peak...

  • Lateral coherence properties of broad-area semiconductor quantum well lasers. Larsson, A.; Salzman, J.; Mittelstein, M.; Yariv, A. // Journal of Applied Physics;7/1/1986, Vol. 60 Issue 1, p66 

    Investigates the lateral coherence of broad-area lasers fabricated from a gallium-arsenic/gallium-aluminum-arsenic graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy. Measurement of the spatial coherence between different points...

  • Interband type-II miniband-to-bound state diode lasers for the midinfrared. Mermelstein, C.; Schmitz, J.; Kiefer, R.; Walther, M.; Wagner, J. // Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p537 

    A design for midinfrared diode lasers based on interband type-II miniband-to-bound state transitions is proposed and has been demonstrated experimentally. Type-II miniband-to-bound state laser structures emitting at 3.25 μm with active regions consisting of 5 and 10 W periods were grown by...

  • Grating coupling and intersubband absorption at 10 μm in GaAs/AlxGa1-xAs infrared quantum well waveguides. Ralston, J. D.; Gallagher, D. F. G.; Bittner, P.; Fleissner, J.; Dischler, B.; Koidl, P. // Journal of Applied Physics;4/1/1992, Vol. 71 Issue 7, p3562 

    Provides information on a study that described the design, fabrication, grating coupling and intersubband absorption in molecular beam epitaxy-grown GaAs/Al[subx]Ga[sub1-x]As mid-infrared single-mode waveguides. Methodology of the study; Results and discussion on the study.

  • Study of growth temperature in gas-source molecular-beam epitaxy growth of InGaAs/GaAs quantum.... Zhang, G.; Ovtchinnikov, A.; Pessa, M. // Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p967 

    Examines the growth temperature of indium gallium arsenide/gallium arsenide quantum well lasers by gas-source molecular beam epitaxy. Effect of growth temperature on threshold current density; Origin of the recombination centers; Improvement of photoluminescence intensity of the quantum wells.

  • Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy. Williams, R.L.; Dion, M.; Chatenoud, F.; Dzurko, K. // Applied Physics Letters;4/29/1991, Vol. 58 Issue 17, p1816 

    Studies the growth of extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy. Threshold current density; Internal quantum efficiency for the lasers.

  • Strained-layer InGaAs/GaInAsP/GaInP quantum well lasers grown by gas-source molecular beam epitaxy. Zhang, G. // Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1405 

    Demonstrates the first strained-layer InGaAs/GaInAsP/GaInP well lasers grown by gas-source molecular beam epitaxy. Composition of InGaAs and GaInAsP; Analysis of the photoluminescence from quantum wells prior to laser processing; Determination of the internal quantum efficiency and internal...

  • Monolithic integration of GaAs and In[sub 0.2]Ga[sub 0.8]As lasers by molecular bearm epitaxy on... Berger, P.R.; Dutta, N.K.; Lopata, J.; Chu, S.N.G.; Chand, Naresh // Applied Physics Letters;6/10/1991, Vol. 58 Issue 23, p2698 

    Studies monolithic integration of GaAs and In[sub 0.2]Ga[sub 0.8]As lasers by molecular beam epitaxy on GaAs. Protection of GaAs laser stripes during regrowth under a dielectric mask over which polycrystalline material grew; Characteristics of the lasers; Threshold currents.

  • Researchers grow a lateral-junction VCSEL. Noaker, Paula M. // Laser Focus World;Aug99, Vol. 35 Issue 8, p58 

    Reports on the use of molecular-beam epitaxy to grow a lateral junction vertical-cavity surface-emitting laser (VCSEL) to solve the problem on excess energy in carriers. How researchers at the Adaptive Communications Laboratories at the Advance Research Instituted developed the solution; Active...

  • Gas-source molecular beam epitaxy growth of an 8.5 mum quantum cascade laser. Slivken, S.; Jelen, C. // Applied Physics Letters;11/3/1997, Vol. 71 Issue 18, p2593 

    Demonstrates the growth of a quantum cascade laser by gas-source molecular beam epitaxy. Basis for the calculation of wave functions and energy levels; Effect of heat dissipation on the quantum laser; Use of photolithography and wet chemical etching to process the waveguide cladding of lasers.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics