TITLE

635 nm GaInP/GaAlInP surface-emitting laser diodes

AUTHOR(S)
Ou, S.S.; Yang, J.J.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3262
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the two-dimensional visible surface-emitting laser diodes operating at 635 nanometer. Fabrication of the deflecting 45 and 90 degree micromirrors by ion beam etching; Observation of self-optical-annealing phenomenon; Achievement of pulsed output powers of 170 and 70 milliwatts at room temperature.
ACCESSION #
4241289

 

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