TITLE

Growth and strain compensation effects in the ternary Si[sub 1-x-y]Ge[sub x]C[sub y] alloy system

AUTHOR(S)
Eberl, K.; Iyer, S.S.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p3033
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the synthesis of pseudomorphic Si[sub 1-y]C[sub y] and Si[sub 1-x-y]Ge[sub x]C[sub y] alloy layers on a silicon substrate by molecular beam epitaxy using solid sources. Importance of strain compensation in heterostructure engineering; Effect of the pseudomorphic composition on the energy gap; Use of strain compensation for dopant-induced strain.
ACCESSION #
4241275

 

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