TITLE

Optical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam

AUTHOR(S)
Viturro, R. Enrique; Melloch, Michael R.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p3007
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the deep-level states in gallium arsenide grown at low-substrate temperatures by molecular beam epitaxy. Use of cathodoluminescence and photoluminescence spectroscopy; Evolution of the deep-level states upon annealing; Association between the deep-level emissions and excess concentration of arsenic.
ACCESSION #
4241267

 

Related Articles

  • Strongly polarized bound exciton luminescence from GaAs grown by molecular beam epitaxy. Skolnick, M. S.; Harris, T. D.; Tu, C. W.; Brennan, T. M.; Sturge, M. D. // Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p427 

    We report strongly polarized luminescence spectra in the 1.504-1.511-eV spectral region in GaAs layers grown by molecular beam epitaxy. Up to 50 individual features are observed in very well resolved spectra. The sharp lines are attributed to bound exciton recombination at defect pairs...

  • Properties of strained (In, Ga, Al)As lasers with laterally modulated active region. Ledentsov, N.N.; Bimberg, D. // Applied Physics Letters;5/26/1997, Vol. 70 Issue 21, p2888 

    Examines structural and luminescence properties of low indium composition insertions in gallium arsenide matrix deposited by molecular beam epitaxy. Formation of dimensional islands from heteroepitaxy in lattice mismatched systems; Demonstration of electroluminescence depolarization in strained...

  • Selective-area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy. Hong, J. M.; Wang, S.; Sands, T.; Washburn, J.; Flood, J. D.; Merz, J. L.; Low, T. // Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p142 

    Optical-quality GaAs films were successfully grown by molecular beam epitaxy (MBE) through SiO2 insulator windows on GaAs (100) substrates, thus making this selective-area epitaxy applicable to the fabrication of GaAs optoelectronic integrated circuits. The photoluminescence spectra at 2.2 K...

  • Effect of barrier layer composition and thickness on structural and optical properties of TlInGaAsN/TlGaAs(N) triple quantum wells. Kang Min Kim; Krishnamurthy, Daivasigamani; Yuji Sakai; Jong-Uk Seo; Hasegawa, Shigehiko; Asahi, Hajime // Journal of Materials Science: Materials in Electronics;Oct2010, Vol. 21 Issue 10, p1024 

    Influence of the barrier layer composition and thickness on the structural and optical properties of TlInGaAsN Triple quantum wells (TQWs) was studied. Three types of TlInGaAsN TQW structures with different barriers were grown by gas-source molecular-beam epitaxy. Strong photoluminescence...

  • Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy. Fujiwara, K.; Nishikawa, Y.; Tokuda, Y.; Nakayama, T. // Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p701 

    Effects of substrate preparation conditions, i.e., wet chemical and ultrahigh vacuum cleaning preparations, on GaAs oval defects grown by molecular beam epitaxy (MBE) were investigated. It is found that, with our MBE system, the presence of the smaller (<10 μm) ovally shaped defects without...

  • Nucleation and initial growth of GaAs on Si substrate. Rosner, S. J.; Koch, S. M.; Harris, J. S. // Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1764 

    The microstructure of thin layers of GaAs grown on Si substrates at low growth temperatures by molecular beam epitaxy was examined using transmission electron microscopy and MeV 4He+ ion channeling angular scan analysis. Crystalline island formation is observed at temperatures as low as 325...

  • Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy. Allen, L. T. P.; Weber, E. R.; Washburn, J.; Pao, Y. C. // Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p670 

    Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga-rich ledges on the (110) surface has been shown to be the necessary condition for two-dimensional growth. The layers exhibit a room-temperature...

  • Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities. Chen, H. Z.; Ghaffari, A.; Morkoç, H.; Yariv, A. // Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2094 

    Single quantum well, graded refractive index separate confinement heterostucture (SQW GRINSCH) lasers with well thicknesses in the range of 65–480 Å have been grown by molecular beam epitaxy (MBE) on (100) and off of (100) by 4° toward (111) A substrates. The threshold current...

  • Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures. Kaminska, M.; Liliental-Weber, Z.; Weber, E. R.; George, T.; Kortright, J. B.; Smith, F. W.; Tsaur, B-Y.; Calawa, A. R. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1881 

    GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics