Optical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam

Viturro, R. Enrique; Melloch, Michael R.
June 1992
Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p3007
Academic Journal
Investigates the deep-level states in gallium arsenide grown at low-substrate temperatures by molecular beam epitaxy. Use of cathodoluminescence and photoluminescence spectroscopy; Evolution of the deep-level states upon annealing; Association between the deep-level emissions and excess concentration of arsenic.


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