Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation

Kar, S.; Srikanth, K.
June 1992
Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p3001
Academic Journal
Investigates the efficacy of room-temperature hydrogenation in removing ion-beam-induced defects in metal-oxide-silicon (MOS) structures. Generation of defects by exposure of thermally oxidized silicon samples; Sensitivity of MOS structures to ion-beam damage; Use of Raman spectroscopy to monitor the defects.


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