TITLE

Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation

AUTHOR(S)
Kar, S.; Srikanth, K.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p3001
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the efficacy of room-temperature hydrogenation in removing ion-beam-induced defects in metal-oxide-silicon (MOS) structures. Generation of defects by exposure of thermally oxidized silicon samples; Sensitivity of MOS structures to ion-beam damage; Use of Raman spectroscopy to monitor the defects.
ACCESSION #
4241265

 

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