Quantum wires prepared by liquid-phase-epitaxial overgrowth of dry-etched AlGaAs-GaAs

Hornischer, W.; Grambow, P.
June 1992
Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p2998
Academic Journal
Presents a technique to overgrow deep-mesa-etched AlGaAs-GaAs quantum wires with AlGaAs by liquid-phase epitaxy. Advantage of the deep-mesa etching technique; Reduction of surface-state density and related lateral edge depletion; Formation of quasi-one-dimensional electron system by far infrared spectroscopy.


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