TITLE

Mechanical properties of 3C silicon carbide

AUTHOR(S)
Lijun Tong; Mehregany, Mehran
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p2992
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measures the residual stress and Young's modulus of 3C silicon carbide (SiC) epitaxial films deposited on silicon substrates. Use of SiC diaphragms fabricated with silicon micromachining techniques; Average of the film's tensile residual stress; Determination of the bending moment due to the residual stress variation through the thickness of the film.
ACCESSION #
4241261

 

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