Mechanical properties of 3C silicon carbide

Lijun Tong; Mehregany, Mehran
June 1992
Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p2992
Academic Journal
Measures the residual stress and Young's modulus of 3C silicon carbide (SiC) epitaxial films deposited on silicon substrates. Use of SiC diaphragms fabricated with silicon micromachining techniques; Average of the film's tensile residual stress; Determination of the bending moment due to the residual stress variation through the thickness of the film.


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