TITLE

Effects of nonuniform current injection in GaInAsP/InP vertical-cavity lasers

AUTHOR(S)
Wada, Hiroshi; Babic, Dubravko I.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p2974
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effects of nonuniform current injection in GaInAsP/InP vertical cavity surface-emitting lasers (VCSEL). Measurement of the active-area dependence of the threshold current density at various temperatures; Identification of the mechanism responsible for the high threshold current in the VCSEL; Composition of the laser cavity.
ACCESSION #
4241255

 

Related Articles

  • Temperature dependence of threshold current in p-doped quantum dot lasers. Sandall, I. C.; Smowton, P. M.; Thomson, J. D.; Badcock, T.; Mowbray, D. J.; Liu, H.-Y.; Hopkinson, M. // Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p151118 

    The authors measure the temperature dependence of the components of threshold current of 1300 nm undoped and p-doped quantum dot lasers and show that the temperature dependence of the injection level necessary to achieve the required gain is the largest factor in producing the observed negative...

  • Growth and characteristics of ultralow threshold 1.45 μm metamorphic InAs tunnel injection quantum dot lasers on GaAs. Mi, Z.; Bhattacharya, P.; Yang, J. // Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p153109 

    The molecular beam epitaxial growth and characteristics of 1.45 μm metamorphic InAs quantum dot tunnel injection lasers on GaAs have been studied. Under optimized growth conditions, the quantum dots exhibit photoluminescence linewidths ∼30 meV and high intensity at room temperature. The...

  • Harmonics Reduction in Three Phase System Using Current Injection Technique for Adjustable Speed Drive. Chandra Sekar, T.; Justus Rabi, B.; Kannan, A. // Australian Journal of Basic & Applied Sciences;Oct2014, p132 

    This paper presents a new approach to mitigate harmonics and to improve the power factor of a three phase front-end uncontrolled rectifier. A high-power-factor could be achieved by injecting high-frequency triangular current from the output of the three-phase inverter. The HF current modulates...

  • Improved lead-salt lasers set power record.  // Laser Focus World;Jan97, Vol. 33 Issue 1, p9 

    Focuses on a lead-salt diffused-junction laser fabricated by Laser Components. Output power produced by the laser; Other characteristics; Applications.

  • Noncascaded intersubband injection lasers at λapprox. 7.7 μm. Gmachl, Claire; Capasso, Federico; Tredicucci, Alessandro; Sivco, Deborah L.; Hutchinson, Albert L.; Chu, S. N. George; Cho, Alfred Y. // Applied Physics Letters;12/28/1998, Vol. 73 Issue 26, p3830 

    The realization of the first noncascaded intersubband injection lasers based on a single optical transition is reported. The unipolar lasers are based on an active region consisting of three InGaAs quantum wells closely coupled by thin AlInAs barriers. The lasers emit at λapprox. 7.7 μm...

  • Frequency-tripled Ti:sapphire laser illuminates photoinjector. Roux, Roland // Laser Focus World;Feb94, Vol. 30 Issue 2, p26 

    Reports on the use of the first subpicosecond laser-triggered photoinjector called CANDELA at the Universite de Paris Sud by a team of researchers led by Patrick Georges. Use of a Ti:sapphire amplifier system to trigger the microwave gun; Achievement by phase-locking by mixing output signal...

  • On the general solution to equations modeling a homogeneously broadened injection laser. Lerche, I. // Journal of Mathematical Physics;Jul85, Vol. 26 Issue 7, p1858 

    The strongly coupled, nonlinear, differential equations which describe the amplification of modal intensities for propagation through a homogeneously broadened amplifier are shown to be generally reducible to a linear integral equation which is readily soluble by Laplace transform techniques....

  • Effect of active layer thickness on differential quantum efficiency of 1.55 μm InGaAsP buried crescent injection lasers. Cheng, W. H.; Renner, D. // Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1322 

    Comprehensive measurements of the differential quantum efficiency (ηd ) dependence on the active layer thickness (d) for 1.55 μm InGaAsP buried crescent (BC) injection lasers are presented. The results show that ηd increases rapidly as d decreases. The strong d dependence of ηd in...

  • Difference Mode Generation in Injection Lasers. Aleshkin, V. Ya.; Afonenko, A. A.; Zvonkov, N. B. // Semiconductors;Oct2001, Vol. 35 Issue 10, p1203 

    The nonlinear generation of a difference mode in an injection laser is considered. A new design based on the InGaP/GaAs/InGaAs heterostructure is suggested in order to generate two laser modes with a wavelength of about 1 �m and a difference mode at a wavelength of about 10 �m. In...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics